Effective channel length in Junctionless Nanowire Transistors
| dc.contributor.author | TREVISOLLI, R. | |
| dc.contributor.author | Rodrido Doria | |
| dc.contributor.author | Michelly De Souza | |
| dc.contributor.author | Marcelo Antonio Pavanello | |
| dc.contributor.authorOrcid | https://orcid.org/0000-0003-4448-4337 | |
| dc.contributor.authorOrcid | https://orcid.org/0000-0001-6472-4807 | |
| dc.contributor.authorOrcid | https://orcid.org/0000-0003-1361-3650 | |
| dc.date.accessioned | 2022-01-12T21:59:41Z | |
| dc.date.available | 2022-01-12T21:59:41Z | |
| dc.date.issued | 2015-10-13 | |
| dc.description.abstract | The aim of this work is to analyze the influence of the lateral depletion induced by the gate towards the source/drain regions on the effective channel length of Junctionless Nanowire Transistors. The effective channel length increase at the subthreshold regime is analyzed by means of simulations together with experimental results, showing that the JNT can be significantly longer than the gate length. | |
| dc.identifier.citation | TREVISOLLI, R.; DORIA R., DE SOUZA, M.; PAVANELLO, M. A. Effective channel length in Junctionless Nanowire Transistors. SBMicro 2015 - 30th Symposium on Microelectronics Technology and Devices. Oct. 2015. | |
| dc.identifier.doi | 10.1109/SBMicro.2015.7298144 | |
| dc.identifier.uri | https://repositorio.fei.edu.br/handle/FEI/3948 | |
| dc.relation.ispartof | SBMicro 2015 - 30th Symposium on Microelectronics Technology and Devices | |
| dc.rights | Acesso Restrito | |
| dc.subject.otherlanguage | Effective Channel Length | |
| dc.subject.otherlanguage | Junctionless Transistors | |
| dc.subject.otherlanguage | Subthreshold Operation | |
| dc.title | Effective channel length in Junctionless Nanowire Transistors | |
| dc.type | Artigo de evento | |
| fei.scopus.citations | 17 | |
| fei.scopus.eid | 2-s2.0-84961844730 | |
| fei.scopus.subject | Effective channel length | |
| fei.scopus.subject | Gate length | |
| fei.scopus.subject | Junctionless transistors | |
| fei.scopus.subject | Nanowire transistors | |
| fei.scopus.subject | Source/drain regions | |
| fei.scopus.subject | Subthreshold | |
| fei.scopus.subject | Subthreshold operation | |
| fei.scopus.updated | 2025-02-01 | |
| fei.scopus.url | https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84961844730&origin=inward |