A new analytic model for double gate FinFETs parasitic resistance

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dc.contributor.authorPEREIRA, A. S. N.
dc.contributor.authorRenato Giacomini
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-1060-2649
dc.date.accessioned2022-01-12T22:02:50Z
dc.date.available2022-01-12T22:02:50Z
dc.date.issued2012-09-02
dc.description.abstractA new analytic model for Parasitic Resistance of Double Gate FinFETs is proposed in this work. The model was developed considering the current distribution observed in three-dimensional simulations. The contact resistance was modeled using a variable impedance transmission line model, to approximate source and drain geometries to the real shapes of these regions. The model has a closed expression, without adjustment parameters and is very accurate when compared to simulation results and published experimental data. © The Electrochemical Society.
dc.description.firstpage127
dc.description.issuenumber1
dc.description.lastpage134
dc.description.volume49
dc.identifier.citationPEREIRA, A. S. N.; GIACOMINI, R. A new analytic model for double gate FinFETs parasitic resistance. ECS Transactions, v. 49, n. 1, p. 127-134, Sept. 2012.
dc.identifier.doi10.1149/04901.0127ecst
dc.identifier.issn1938-6737
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/4162
dc.relation.ispartofECS Transactions
dc.rightsAcesso Restrito
dc.titleA new analytic model for double gate FinFETs parasitic resistance
dc.typeArtigo de evento
fei.scopus.citations2
fei.scopus.eid2-s2.0-84875822227
fei.scopus.subjectAdjustment parameter
fei.scopus.subjectAnalytic modeling
fei.scopus.subjectCurrent distribution
fei.scopus.subjectParasitic resistances
fei.scopus.subjectSource and drains
fei.scopus.subjectThree dimensional simulations
fei.scopus.subjectTransmission line modeling
fei.scopus.subjectVariable impedance
fei.scopus.updated2024-05-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84875822227&origin=inward
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