Low-frequency noise in asymmetric self-cascode FD SOI nMOSFETs
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2016-08-29
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ASSALTI, R.
Rodrigo Doria
Marcelo Antonio Pavanello
Michelly De Souza
FLANDRE, D.
Rodrigo Doria
Marcelo Antonio Pavanello
Michelly De Souza
FLANDRE, D.
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SBMicro 2016 - 31st Symposium on Microelectronics Technology and Devices: Chip on the Mountains, co-located 29th SBCCI - Circuits and Systems Design, 6th WCAS - IC Design Cases, 1st INSCIT - Electronic Instrumentation and 16th SForum - Undergraduate-Student Forum
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ASSALTI, R.; DORIA, R.; PAVANELLO, M. A.; DE SOUZA, M.; FLANDRE, D. Low-frequency noise in asymmetric self-cascode FD SOI nMOSFETs. SBMicro 2016 - 31st Symposium on Microelectronics Technology and Devices: Chip on the Mountains, co-located 29th SBCCI - Circuits and Systems Design, 6th WCAS - IC Design Cases, 1st INSCIT - Electronic Instrumentation and 16th SForum - Undergraduate-Student Forum, 2016.
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This paper investigates the origin of low-frequency noise in Asymmetric Self-Cascode Fully Depleted SOI nMOSFETs biased in linear regime with regards to the variation of gate voltage and the channel doping concentration through experimental results.