Low-frequency noise in asymmetric self-cascode FD SOI nMOSFETs
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Tipo de produção
Artigo de evento
Data de publicação
2016-08-29
Texto completo (DOI)
Periódico
SBMicro 2016 - 31st Symposium on Microelectronics Technology and Devices: Chip on the Mountains, co-located 29th SBCCI - Circuits and Systems Design, 6th WCAS - IC Design Cases, 1st INSCIT - Electronic Instrumentation and 16th SForum - Undergraduate-Student Forum
Editor
Texto completo na Scopus
Citações na Scopus
0
Autores
ASSALTI, R.
Rodrigo Doria
Marcelo Antonio Pavanello
Michelly De Souza
FLANDRE, D.
Orientadores
Resumo
This paper investigates the origin of low-frequency noise in Asymmetric Self-Cascode Fully Depleted SOI nMOSFETs biased in linear regime with regards to the variation of gate voltage and the channel doping concentration through experimental results.
Citação
ASSALTI, R.; DORIA, R.; PAVANELLO, M. A.; DE SOUZA, M.; FLANDRE, D. Low-frequency noise in asymmetric self-cascode FD SOI nMOSFETs. SBMicro 2016 - 31st Symposium on Microelectronics Technology and Devices: Chip on the Mountains, co-located 29th SBCCI - Circuits and Systems Design, 6th WCAS - IC Design Cases, 1st INSCIT - Electronic Instrumentation and 16th SForum - Undergraduate-Student Forum, 2016.
Palavras-chave
Keywords
Asymmetric Self-Cascode; experimental results; FD SOI nMOSFETs; Linear regime; Low-frequency noise; Trap density
Assuntos Scopus
experimental results; Linear regime; Low-Frequency Noise; Self-cascode; SOI n-MOSFETs; Trap density