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Low-frequency noise in asymmetric self-cascode FD SOI nMOSFETs

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dc.contributor.authorASSALTI, R.
dc.contributor.authorRodrigo Doria
dc.contributor.authorMarcelo Antonio Pavanello
dc.contributor.authorMichelly De Souza
dc.contributor.authorFLANDRE, D.
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-4448-4337
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-1361-3650
dc.contributor.authorOrcidhttps://orcid.org/0000-0001-6472-4807
dc.date.accessioned2022-01-12T21:58:37Z
dc.date.available2022-01-12T21:58:37Z
dc.date.issued2016-08-29
dc.description.abstractThis paper investigates the origin of low-frequency noise in Asymmetric Self-Cascode Fully Depleted SOI nMOSFETs biased in linear regime with regards to the variation of gate voltage and the channel doping concentration through experimental results.
dc.identifier.citationASSALTI, R.; DORIA, R.; PAVANELLO, M. A.; DE SOUZA, M.; FLANDRE, D. Low-frequency noise in asymmetric self-cascode FD SOI nMOSFETs. SBMicro 2016 - 31st Symposium on Microelectronics Technology and Devices: Chip on the Mountains, co-located 29th SBCCI - Circuits and Systems Design, 6th WCAS - IC Design Cases, 1st INSCIT - Electronic Instrumentation and 16th SForum - Undergraduate-Student Forum, 2016.
dc.identifier.doi10.1109/SBMicro.2016.7731354
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/3874
dc.relation.ispartofSBMicro 2016 - 31st Symposium on Microelectronics Technology and Devices: Chip on the Mountains, co-located 29th SBCCI - Circuits and Systems Design, 6th WCAS - IC Design Cases, 1st INSCIT - Electronic Instrumentation and 16th SForum - Undergraduate-Student Forum
dc.rightsAcesso Restrito
dc.subject.otherlanguageAsymmetric Self-Cascode
dc.subject.otherlanguageexperimental results
dc.subject.otherlanguageFD SOI nMOSFETs
dc.subject.otherlanguageLinear regime
dc.subject.otherlanguageLow-frequency noise
dc.subject.otherlanguageTrap density
dc.titleLow-frequency noise in asymmetric self-cascode FD SOI nMOSFETs
dc.typeArtigo de evento
fei.scopus.citations0
fei.scopus.eid2-s2.0-85007368057
fei.scopus.subjectexperimental results
fei.scopus.subjectLinear regime
fei.scopus.subjectLow-Frequency Noise
fei.scopus.subjectSelf-cascode
fei.scopus.subjectSOI n-MOSFETs
fei.scopus.subjectTrap density
fei.scopus.updated2025-02-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85007368057&origin=inward

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