Gate misalignment evaluation method for commercial MOS trapezoidal gate transistors
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2014-04-04
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SABBADIN, D. S.
Renato Giacomini
Renato Giacomini
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2014 International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2014 - Conference Proceedings
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SABBADIN, D. S.; GIACOMONI, R. Gate misalignment evaluation method for commercial MOS trapezoidal gate transistors. 2014 International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2014 - Conference Proceedings, Apr. 2014.
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© 2014 IEEE.This work addresses the effect of gate misalignment on the electrical characteristics of MOSFET structures with trapezoidal gate shapes. Differential Triangular test structure are used for the extraction of misalignments between gate and the other transistor structures, as a function of the differences in drain currents. Three-dimensional numerical simulation was used for comparison and verification of measurements. These simulations and measurements show how the analytical model developed fits properly to designed structures.