Analog performance of standard and uniaxial strained triple-gate SOI FinFETs under x-ray radiation

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dc.contributor.authorBordallo C.C.M.
dc.contributor.authorTeixeira F.F.
dc.contributor.authorSilveira M.A.G.
dc.contributor.authorMartino J.A.
dc.contributor.authorAgopian P.G.D.
dc.contributor.authorSimoen E.
dc.contributor.authorClaeys C.
dc.date.accessioned2019-08-19T23:47:19Z
dc.date.available2019-08-19T23:47:19Z
dc.date.issued2014
dc.description.abstract© 2014 IOP Publishing Ltd.The influence of x-ray irradiation on the main digital and analog parameters of triple gate silicon-on- insulator FinFETs is investigated for unstrained and uniaxially strained devices. Comparing the p- and n-MuGFET response to radiation, x-rays can be more harmful for nMuGFETs than for the p-type counterparts due to the back-interface leakage current, which is generated by the positive charges trapped in the buried oxide. However, in pMuGFETs, the radiation tends to suppress the parasitic back-conduction, resulting in an improvement of the device performance.
dc.description.firstpage125015
dc.description.issuenumber12
dc.description.volume29
dc.identifier.citationBORDALLO, C. C. M.; SILVEIRA, M. A. G.; TEIXEIRA, F. F.; MARTINO, J. A.; AGOPIAN, P. G. D.; CLAEYS, C.; SIMOEN, E.. Analog performance of standard and uniaxial strained triple-gate SOI FinFETs under x-ray radiation. Semiconductor Science and Technology, v. 29, n. 12, p. 125015, 2014.
dc.identifier.doi10.1088/0268-1242/29/12/125015
dc.identifier.issn1361-6641
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/1457
dc.relation.ispartofSemiconductor Science and Technology
dc.rightsAcesso Restrito
dc.subject.otherlanguageDigital and analog parameters
dc.subject.otherlanguageMultiple-gate MOSFETs (MuGFETs)
dc.subject.otherlanguageX-ray irradiation
dc.titleAnalog performance of standard and uniaxial strained triple-gate SOI FinFETs under x-ray radiation
dc.typeArtigo
fei.scopus.citations2
fei.scopus.eid2-s2.0-84911911792
fei.scopus.subjectAnalog parameters
fei.scopus.subjectAnalog performance
fei.scopus.subjectBuried oxides
fei.scopus.subjectDevice performance
fei.scopus.subjectMOSFETs
fei.scopus.subjectPositive charges
fei.scopus.subjectX ray irradiation
fei.scopus.subjectX ray radiation
fei.scopus.updated2024-03-04
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84911911792&origin=inward
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