Adaption of triple gate junctionless MOSFETs analytical compact model for accurate circuit design in a wide temperature range

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dc.contributor.authorCERDEIRA, A.
dc.contributor.authorAVILA-HERRERA, F.
dc.contributor.authorESTRADA, M.
dc.contributor.authorDORIA, R. T.
dc.contributor.authorMarcelo Antonio Pavanello
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-1361-3650
dc.date.accessioned2022-01-12T21:57:22Z
dc.date.available2022-01-12T21:57:22Z
dc.date.issued2018-03-19
dc.description.abstractThis paper presents the necessary adaptions on the proposed compact analytical model of triple gate junctionless nanowire transistors for accurate description of device electrical characteristics in a wide temperature range. The model validation is performed by comparison against experimental results showing very good agreement, with continuous current and its derivatives in all regions of operation and temperatures.
dc.description.firstpage1
dc.description.lastpage4
dc.description.volume2018-January
dc.identifier.citationCERDEIRA, A.; AVILA-HERRERA, F.; ESTRADA, M.; DORIA, R. T.; PAVANELLO, M. A. Adaption of triple gate junctionless MOSFETs analytical compact model for accurate circuit design in a wide temperature range. 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018, p. 1-4, 2018
dc.identifier.doi10.1109/ULIS.2018.8354743
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/3788
dc.relation.ispartof2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018
dc.rightsAcesso Restrito
dc.subject.otherlanguagecompact model
dc.subject.otherlanguageJunctioless nanowire transistor
dc.subject.otherlanguagetemperature
dc.titleAdaption of triple gate junctionless MOSFETs analytical compact model for accurate circuit design in a wide temperature range
dc.typeArtigo de evento
fei.scopus.citations0
fei.scopus.eid2-s2.0-85050953816
fei.scopus.subjectCircuit designs
fei.scopus.subjectCompact model
fei.scopus.subjectElectrical characteristic
fei.scopus.subjectModel validation
fei.scopus.subjectMOSFETs
fei.scopus.subjectNanowire transistors
fei.scopus.subjectTriple-gate
fei.scopus.subjectWide temperature ranges
fei.scopus.updated2024-07-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85050953816&origin=inward
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