Experimental comparison between trigate p-TFET and p-FinFET analog performance as a function of temperature
N/D
Tipo de produção
Artigo
Data de publicação
2013-01-05
Texto completo (DOI)
Periódico
IEEE Transactions on Electron Devices
Editor
Texto completo na Scopus
Citações na Scopus
69
Autores
AGOPIAN, P. G. D.
MARTINO, J. A.
ROOYACKERS, R.
VANDOOREN, A.
SIMOEN, E.
CLAEYS, C.
Orientadores
Resumo
This paper presents, for the first time, the experimental comparison between the p-type trigate FinFET and trigate p-TFET analog performances for devices fabricated on the same wafer. A careful analysis of the electrical characteristics is performed to choose the best bias conditions for the analog comparison between these devices. A higher intrinsic voltage gain is obtained for p-TFET devices because of their better output conductance, which is more than four orders of magnitude better than the one obtained for p-FinFET transistors at the same bias conditions from room temperature up to 150° C. © 1963-2012 IEEE.
Citação
AGOPIAN, P. G. D.; MARTINO, J. A.; MARTINO, J. A.; VANDOOREN, A.; SIMOEN, E.; CLAEYS, C.Experimental comparison between trigate p-TFET and p-FinFET analog performance as a function of temperature. IEEE Transactions on Electron Devices, v. 60, n. 8, 2013.
Palavras-chave
Keywords
Analog performance; band-to-band tunneling (BTBT); multiple-gate tunneling field effect transistor (MuGTFET); self-heating effect (SHE); silicon-on-insulator (SOI); vertical multiple-gate SOI MOSFETs (FinFET)
Assuntos Scopus
Analog performance; Band to band tunneling; Self-heating effect; Silicon-on-insulators; SOI-MOSFETs; Tunneling field-effect transistors