Experimental comparison between trigate p-TFET and p-FinFET analog performance as a function of temperature
Nenhuma Miniatura disponível
Citações na Scopus
67
Tipo de produção
Artigo
Data
2013-01-05
Autores
AGOPIAN, P. G. D.
MARTINO, J. A.
ROOYACKERS, R.
VANDOOREN, A.
SIMOEN, E.
CLAEYS, C.
MARTINO, J. A.
ROOYACKERS, R.
VANDOOREN, A.
SIMOEN, E.
CLAEYS, C.
Orientador
Periódico
IEEE Transactions on Electron Devices
Título da Revista
ISSN da Revista
Título de Volume
Citação
AGOPIAN, P. G. D.; MARTINO, J. A.; MARTINO, J. A.; VANDOOREN, A.; SIMOEN, E.; CLAEYS, C.Experimental comparison between trigate p-TFET and p-FinFET analog performance as a function of temperature. IEEE Transactions on Electron Devices, v. 60, n. 8, 2013.
Texto completo (DOI)
Palavras-chave
Resumo
This paper presents, for the first time, the experimental comparison between the p-type trigate FinFET and trigate p-TFET analog performances for devices fabricated on the same wafer. A careful analysis of the electrical characteristics is performed to choose the best bias conditions for the analog comparison between these devices. A higher intrinsic voltage gain is obtained for p-TFET devices because of their better output conductance, which is more than four orders of magnitude better than the one obtained for p-FinFET transistors at the same bias conditions from room temperature up to 150° C. © 1963-2012 IEEE.