Electric field and temperature effects in irradiated MOSFETs

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dc.contributor.authorMarcilei Aparecida Guazzelli
dc.contributor.authorSANTOS, R. B. B.
dc.contributor.authorLEITE, F. G.
dc.contributor.authorARAUJO, N. E.
dc.contributor.authorCIRNE, K. H.
dc.contributor.authorMELO, M. A. A.
dc.contributor.authorRALLO, A.
dc.contributor.authorAGUIAR, V. A. P.
dc.contributor.authorAGUIRRE, F.
dc.contributor.authorMACCHIONE, E. L. A.
dc.contributor.authorADDED, N.
dc.contributor.authorMEDINA, N.H.
dc.contributor.authorOrcidhttps://orcid.org/0000-0001-7110-7241
dc.date.accessioned2022-01-12T21:58:56Z
dc.date.available2022-01-12T21:58:56Z
dc.date.issued2016-12-04
dc.description.abstract© 2016 Author(s).Electronic devices exposed to ionizing radiation exhibit degradation on their electrical characteristics, which may compromise the functionality of the device. Understanding the physical phenomena responsible for radiation damage, which may be specific to a particular technology, it is of extreme importance to develop methods for testing and recovering the devices. The aim of this work is to check the influence of thermal annealing processes and electric field applied during irradiation of Metal Oxide Semiconductor Field Effect Transistors (MOSFET) in total ionizing dose experiments analyzing the changes in the electrical parameters in these devices.
dc.description.volume1753
dc.identifier.citationGUAZZELLI, M. A.; SANTOS, R. B. B.; LEITE, F. G..; ARAUJO, N. E.; CIRNE, K. H.; MELO, M. A. A.; RALLO, A.; AGUIAR, V. A. P.; AGUIRRE, F.; MACCHIONE, E. L. A.; ADDED, N.; MEDINA, N.H. Electric field and temperature effects in irradiated MOSFETs. AIP Conference Proceedings, v. 1753, Dec. 2014.
dc.identifier.doi10.1063/1.4955374
dc.identifier.issn1551-7616
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/3895
dc.relation.ispartofAIP Conference Proceedings
dc.rightsAcesso Restrito
dc.titleElectric field and temperature effects in irradiated MOSFETs
dc.typeArtigo de evento
fei.scopus.citations2
fei.scopus.eid2-s2.0-84984586705
fei.scopus.updated2024-12-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84984586705&origin=inward
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