Heavy ions induced single event upsets testing of the 28 nm Xilinx Zynq-7000 all programmable SoC

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dc.contributor.authorTAMBARA, L. A.
dc.contributor.authorKASTENSMIDT, F. L.
dc.contributor.authorMEDINA, N. H.
dc.contributor.authorADDED, N.
dc.contributor.authorAGUIAR, V. A. P.
dc.contributor.authorAGUIRRE, F.
dc.contributor.authorMACCHIONE, E. L. A.
dc.contributor.authorMarcilei Aparecida Guazzelli
dc.contributor.authorOrcidhttps://orcid.org/0000-0001-7110-7241
dc.date.accessioned2022-01-12T21:59:37Z
dc.date.available2022-01-12T21:59:37Z
dc.date.issued2015-07-13
dc.description.abstract© 2015 IEEE.The recent advance of silicon technology has allowed the integration of complex systems in a single chip. Nowadays, Field Programmable Gate Array (FPGA) devices are composed not only of the programmable fabric but also by hard-core processors, dedicated processing block interfaces to various peripherals, on-chip bus structures and analog blocks. Among the latest released devices of this type, this work focuses in the 28 nm Xilinx Zynq-7000 All Programmable SoC (APSoC). While not immune to the radiation environment in space, the Zynq-7000 seems to be very attractive for the aerospace sector due to its high computational power capability and low-power consumption. In this work, results from heavy ions testing for Zynq-7000 are presented. The experiments were performed in a Brazilian facility located at the University of São Paulo, Brazil.
dc.description.volume2015-November
dc.identifier.citationTAMBARA, L. A.; KASTENSMIDT, F. L.; MEDINA, N. H.; ADDED, N.; AGUIAR, V. A. P.; AGUIRRE, F.; MACCHIONE, E. L. A.; GUAZZELLI, M. A. Heavy ions induced single event upsets testing of the 28 nm Xilinx Zynq-7000 all programmable SoC. IEEE Radiation Effects Data Workshop, v. 2015-November, Jul. 2015.
dc.identifier.doi10.1109/REDW.2015.7336716
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/3944
dc.relation.ispartofIEEE Radiation Effects Data Workshop
dc.rightsAcesso Restrito
dc.subject.otherlanguageField programmable gate arrays
dc.subject.otherlanguageProgram processors
dc.subject.otherlanguageRandom access memory
dc.subject.otherlanguageSilicon
dc.subject.otherlanguageSingle event upsets
dc.subject.otherlanguageSystem-on-chip
dc.titleHeavy ions induced single event upsets testing of the 28 nm Xilinx Zynq-7000 all programmable SoC
dc.typeArtigo de evento
fei.scopus.citations38
fei.scopus.eid2-s2.0-84958661459
fei.scopus.subjectAerospace sectors
fei.scopus.subjectBlock interfaces
fei.scopus.subjectComputational power
fei.scopus.subjectLow-power consumption
fei.scopus.subjectRadiation environments
fei.scopus.subjectRandom access memory
fei.scopus.subjectSilicon Technologies
fei.scopus.subjectSingle event upsets
fei.scopus.updated2025-02-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84958661459&origin=inward
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