Heavy ions induced single event upsets testing of the 28 nm Xilinx Zynq-7000 all programmable SoC
dc.contributor.author | TAMBARA, L. A. | |
dc.contributor.author | KASTENSMIDT, F. L. | |
dc.contributor.author | MEDINA, N. H. | |
dc.contributor.author | ADDED, N. | |
dc.contributor.author | AGUIAR, V. A. P. | |
dc.contributor.author | AGUIRRE, F. | |
dc.contributor.author | MACCHIONE, E. L. A. | |
dc.contributor.author | Marcilei Aparecida Guazzelli | |
dc.contributor.authorOrcid | https://orcid.org/0000-0001-7110-7241 | |
dc.date.accessioned | 2022-01-12T21:59:37Z | |
dc.date.available | 2022-01-12T21:59:37Z | |
dc.date.issued | 2015-07-13 | |
dc.description.abstract | © 2015 IEEE.The recent advance of silicon technology has allowed the integration of complex systems in a single chip. Nowadays, Field Programmable Gate Array (FPGA) devices are composed not only of the programmable fabric but also by hard-core processors, dedicated processing block interfaces to various peripherals, on-chip bus structures and analog blocks. Among the latest released devices of this type, this work focuses in the 28 nm Xilinx Zynq-7000 All Programmable SoC (APSoC). While not immune to the radiation environment in space, the Zynq-7000 seems to be very attractive for the aerospace sector due to its high computational power capability and low-power consumption. In this work, results from heavy ions testing for Zynq-7000 are presented. The experiments were performed in a Brazilian facility located at the University of São Paulo, Brazil. | |
dc.description.volume | 2015-November | |
dc.identifier.citation | TAMBARA, L. A.; KASTENSMIDT, F. L.; MEDINA, N. H.; ADDED, N.; AGUIAR, V. A. P.; AGUIRRE, F.; MACCHIONE, E. L. A.; GUAZZELLI, M. A. Heavy ions induced single event upsets testing of the 28 nm Xilinx Zynq-7000 all programmable SoC. IEEE Radiation Effects Data Workshop, v. 2015-November, Jul. 2015. | |
dc.identifier.doi | 10.1109/REDW.2015.7336716 | |
dc.identifier.uri | https://repositorio.fei.edu.br/handle/FEI/3944 | |
dc.relation.ispartof | IEEE Radiation Effects Data Workshop | |
dc.rights | Acesso Restrito | |
dc.subject.otherlanguage | Field programmable gate arrays | |
dc.subject.otherlanguage | Program processors | |
dc.subject.otherlanguage | Random access memory | |
dc.subject.otherlanguage | Silicon | |
dc.subject.otherlanguage | Single event upsets | |
dc.subject.otherlanguage | System-on-chip | |
dc.title | Heavy ions induced single event upsets testing of the 28 nm Xilinx Zynq-7000 all programmable SoC | |
dc.type | Artigo de evento | |
fei.scopus.citations | 38 | |
fei.scopus.eid | 2-s2.0-84958661459 | |
fei.scopus.subject | Aerospace sectors | |
fei.scopus.subject | Block interfaces | |
fei.scopus.subject | Computational power | |
fei.scopus.subject | Low-power consumption | |
fei.scopus.subject | Radiation environments | |
fei.scopus.subject | Random access memory | |
fei.scopus.subject | Silicon Technologies | |
fei.scopus.subject | Single event upsets | |
fei.scopus.updated | 2025-02-01 | |
fei.scopus.url | https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84958661459&origin=inward |