3D simulation of Triple-Gate MOSFETs

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dc.contributor.authorCONDE, J.
dc.contributor.authorCERDEIRA, A.
dc.contributor.authorMarcelo Antonio Pavanello
dc.contributor.authorKILCHYTSKA, V.
dc.contributor.authorFLANDRE, D.
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-1361-3650
dc.date.accessioned2022-01-12T22:03:59Z
dc.date.available2022-01-12T22:03:59Z
dc.date.issued2010-05-19
dc.description.abstractIn this paper we present a new approach of analyzing 3D structure for Triple-Gate MOSFETs with three different mesh regions, one at the top and two in the sidewalls of the fin, which allows the consideration of different carrier mobility at each region due to the crystalline orientation and technological processing. A procedure for the extraction of the mobility parameters in each region is developed. Validation of the proposed structure was made for a FinFET arrays with fixed channel length and different fin widths, obtaining a very good coincidence between experimental and simulated characteristics. © 2010 IEEE.
dc.description.firstpage409
dc.description.lastpage411
dc.identifier.citationCONDE, J.; CERDEIRA, A.; PAVANELLO, M. A; KILCHYTSKA, V.; FLANDRE, D. 3D simulation of Triple-Gate MOSFETs. 2010 27th International Conference on Microelectronics, MIEL 2010 - Proceedings, p. 409-411, May, 2010.
dc.identifier.doi10.1109/MIEL.2010.5490454
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/4241
dc.relation.ispartof2010 27th International Conference on Microelectronics, MIEL 2010 - Proceedings
dc.rightsAcesso Restrito
dc.title3D simulation of Triple-Gate MOSFETs
dc.typeArtigo de evento
fei.scopus.citations3
fei.scopus.eid2-s2.0-77955180332
fei.scopus.subject3D simulations
fei.scopus.subject3D Structure
fei.scopus.subjectChannel length
fei.scopus.subjectCrystalline orientations
fei.scopus.subjectFin widths
fei.scopus.subjectMobility parameters
fei.scopus.subjectNew approaches
fei.scopus.subjectTriple-gate MOSFETs
fei.scopus.updated2024-11-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=77955180332&origin=inward
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