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Low frequency noise in submicron Graded-Channel SOI MOSFETs

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dc.contributor.authorNEMER, J. P.
dc.contributor.authorMichelly De Souza
dc.contributor.authorFLANDRE, D.
dc.contributor.authorMarcelo Antonio Pavanello
dc.contributor.authorOrcidhttps://orcid.org/0000-0001-6472-4807
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-1361-3650
dc.date.accessioned2022-01-12T22:01:47Z
dc.date.available2022-01-12T22:01:47Z
dc.date.issued2013-09-06
dc.description.abstractThe origin of the low-frequency noise in submicron fully depleted Graded-Channel (GC) SOI MOSFET is investigated in terms of the channel length comparing two different technologies, OKI semiconductors and UCL. © 2013 IEEE.
dc.identifier.citationNEMER, J. P.; DE SOUZA, M; FLANDRE, D.; PAVANELLO, M. A. Low frequency noise in submicron Graded-Channel SOI MOSFETs. Chip in Curitiba 2013 - SBMicro 2013: 28th Symposium on Microelectronics Technology and Devices. Sept. 2013.
dc.identifier.doi10.1109/SBMicro.2013.6676173
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/4092
dc.relation.ispartofChip in Curitiba 2013 - SBMicro 2013: 28th Symposium on Microelectronics Technology and Devices
dc.rightsAcesso Restrito
dc.subject.otherlanguagegraded channel
dc.subject.otherlanguagelow frequency noise
dc.subject.otherlanguageSOI
dc.subject.otherlanguageSubmicron
dc.titleLow frequency noise in submicron Graded-Channel SOI MOSFETs
dc.typeArtigo de evento
fei.scopus.citations2
fei.scopus.eid2-s2.0-84893507962
fei.scopus.subjectChannel length
fei.scopus.subjectFully depleted
fei.scopus.subjectGraded channels
fei.scopus.subjectLow-Frequency Noise
fei.scopus.subjectSOI
fei.scopus.subjectSOI-MOSFETs
fei.scopus.subjectSubmicron
fei.scopus.updated2025-02-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84893507962&origin=inward

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