DIBL performance of 60 MeV proton-irradiated SOI MuGFETs

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dc.contributor.authorAGOPIAN, P. G. D.
dc.contributor.authorMARTINO, J. A.
dc.contributor.authorKOBAYASHI, D.
dc.contributor.authorPOIZAT, M.
dc.contributor.authorSIMON, E.
dc.contributor.authorCLAEYS, C.
dc.date.accessioned2022-01-12T22:03:56Z
dc.date.available2022-01-12T22:03:56Z
dc.date.issued2010-11-04
dc.description.abstractThe impact of a 60 MeV proton irradiation on the drain induced barrier lowering is investigated for tri-gate FinFETs processed with and without the implementation of different biaxial or uniaxial strain engineering techniques. A contrasting behavior is observed for n- and pFinFETs, which may be associated with the radiation-induced charges in the buried oxide and the influence of the back channel on the front transistor performance. ©2010 IEEE.
dc.description.firstpage105
dc.description.lastpage107
dc.identifier.citationAGOPIAN, P. G. D.; MARTINO, J. A.; KOBAYASHI, D.; POIZAT, M.; SIMON, E.; CLAEYS, C. DIBL performance of 60 MeV proton-irradiated SOI MuGFETs. ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings. p. 105-107, Nov. 2010.
dc.identifier.doi10.1109/ICSICT.2010.5667839
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/4237
dc.relation.ispartofICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings
dc.rightsAcesso Restrito
dc.titleDIBL performance of 60 MeV proton-irradiated SOI MuGFETs
dc.typeArtigo de evento
fei.scopus.citations5
fei.scopus.eid2-s2.0-78751490706
fei.scopus.subjectBack channels
fei.scopus.subjectBuried oxides
fei.scopus.subjectDrain-induced barrier lowering
fei.scopus.subjectFinFETs
fei.scopus.subjectRadiation-induced
fei.scopus.subjectTransistor performance
fei.scopus.subjectTrigate
fei.scopus.subjectUni-axial strains
fei.scopus.updated2024-07-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=78751490706&origin=inward
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