Strategy for Simulation of Analog Circuits with GCSOI MOSFET using BSIM SOI model
N/D
Tipo de produção
Artigo de evento
Data de publicação
2021-04-21
Texto completo (DOI)
Periódico
LAEDC 2021 - IEEE Latin America Electron Devices Conference
Editor
Texto completo na Scopus
Citações na Scopus
0
Autores
DA SILVA, LUCAS MOTA BARBOSA
Michelly De Souza
Orientadores
Resumo
© 2021 IEEE.This work presents a simulation strategy to simulate Graded-Channel SOI MOSFET electrical characteristics using BSIM SOI SPICE model. The use of uniformly doped transistor model is possible by adjusting low field mobility, degradation mobility factors and parameters related to channel length modulation and DIBL effects. A good agreement with experimental data was achieved at device level. The simulation strategy is validated through the simulation of common-source current mirrors using adjusted SPICE model parameters, presenting the same trends of experimental results available in the literature.
Citação
DA SILVA, LUCAS MOTA BARBOSA; DE SOUZA, M. Strategy for Simulation of Analog Circuits with GCSOI MOSFET using BSIM SOI model. LAEDC 2021 - IEEE Latin America Electron Devices Conference, April, 2021.
Palavras-chave
Keywords
Analog Circuits; BSIM SOI; Graded-Channel transistors; SOI; SPICE Simulation
Assuntos Scopus
Channel length modulation; Electrical characteristic; Graded-channel SOI MOSFET; Low field mobility; Mobility factors; Simulation strategies; SPICE modeling; Transistor model