Strategy for Simulation of Analog Circuits with GCSOI MOSFET using BSIM SOI model

dc.contributor.authorDA SILVA, LUCAS MOTA BARBOSA
dc.contributor.authorMichelly De Souza
dc.contributor.authorOrcidhttps://orcid.org/0000-0001-6472-4807
dc.date.accessioned2022-01-12T21:54:03Z
dc.date.available2022-01-12T21:54:03Z
dc.date.issued2021-04-21
dc.description.abstract© 2021 IEEE.This work presents a simulation strategy to simulate Graded-Channel SOI MOSFET electrical characteristics using BSIM SOI SPICE model. The use of uniformly doped transistor model is possible by adjusting low field mobility, degradation mobility factors and parameters related to channel length modulation and DIBL effects. A good agreement with experimental data was achieved at device level. The simulation strategy is validated through the simulation of common-source current mirrors using adjusted SPICE model parameters, presenting the same trends of experimental results available in the literature.
dc.identifier.citationDA SILVA, LUCAS MOTA BARBOSA; DE SOUZA, M. Strategy for Simulation of Analog Circuits with GCSOI MOSFET using BSIM SOI model. LAEDC 2021 - IEEE Latin America Electron Devices Conference, April, 2021.
dc.identifier.doi10.1109/LAEDC51812.2021.9437928
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/3579
dc.relation.ispartofLAEDC 2021 - IEEE Latin America Electron Devices Conference
dc.rightsAcesso Restrito
dc.subject.otherlanguageAnalog Circuits
dc.subject.otherlanguageBSIM SOI
dc.subject.otherlanguageGraded-Channel transistors
dc.subject.otherlanguageSOI
dc.subject.otherlanguageSPICE Simulation
dc.titleStrategy for Simulation of Analog Circuits with GCSOI MOSFET using BSIM SOI model
dc.typeArtigo de evento
fei.scopus.citations0
fei.scopus.eid2-s2.0-85108217796
fei.scopus.subjectChannel length modulation
fei.scopus.subjectElectrical characteristic
fei.scopus.subjectGraded-channel SOI MOSFET
fei.scopus.subjectLow field mobility
fei.scopus.subjectMobility factors
fei.scopus.subjectSimulation strategies
fei.scopus.subjectSPICE modeling
fei.scopus.subjectTransistor model
fei.scopus.updated2024-05-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85108217796&origin=inward
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