Mitigating MOSFET radiation effects by using the wave layout in analog ICs applications
Nenhuma Miniatura disponível
Citações na Scopus
4
Tipo de produção
Artigo
Data
2015-09-10
Autores
SOUZA, R. N.
Marcilei Aparecida Guazzelli
Salvador Gimenez
Marcilei Aparecida Guazzelli
Salvador Gimenez
Orientador
Periódico
Journal of Integrated Circuits and Systems
Título da Revista
ISSN da Revista
Título de Volume
Citação
SOUZA, R. N.; GUAZZELLI, M. A.; GIMENEZ, S. Mitigating MOSFET radiation effects by using the wave layout in analog ICs applications. Journal of Integrated Circuits and Systems, v. 10, n. 1, p. 30-37, sept. 2015.
Texto completo (DOI)
Palavras-chave
Resumo
© 2015 Brazilian Microelectronics Society. All rights reserved.This paper presents an experimental comparative study of the Total Ionizing Dose (TID) effects between the Metal-Oxide-Semiconductor (MOS) Field Effect Transistors (MOSFET) manufactured with the Wave (S gate geometry) and the standard layout (CnM). Because of the special geometric characteristic of the gate, drain and source regions of the Wave MOSFET (WnM), this innovative layout proposal for transistors is able to mitigate the TID effects in order to implement in analog integrated circuits (IC) for space and medical applications without causing any additional cost to the Complementary MOS (CMOS) manufacturing process.