Mitigating MOSFET radiation effects by using the wave layout in analog ICs applications

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dc.contributor.authorSOUZA, R. N.
dc.contributor.authorMarcilei Aparecida Guazzelli
dc.contributor.authorSalvador Gimenez
dc.contributor.authorOrcidhttps://orcid.org/0000-0001-7110-7241
dc.contributor.authorOrcidhttps://orcid.org/0000-0002-3616-9559
dc.date.accessioned2023-08-26T23:48:23Z
dc.date.available2023-08-26T23:48:23Z
dc.date.issued2015-09-10
dc.description.abstract© 2015 Brazilian Microelectronics Society. All rights reserved.This paper presents an experimental comparative study of the Total Ionizing Dose (TID) effects between the Metal-Oxide-Semiconductor (MOS) Field Effect Transistors (MOSFET) manufactured with the Wave (S gate geometry) and the standard layout (CnM). Because of the special geometric characteristic of the gate, drain and source regions of the Wave MOSFET (WnM), this innovative layout proposal for transistors is able to mitigate the TID effects in order to implement in analog integrated circuits (IC) for space and medical applications without causing any additional cost to the Complementary MOS (CMOS) manufacturing process.
dc.description.firstpage30
dc.description.issuenumber1
dc.description.lastpage37
dc.description.volume10
dc.identifier.citationSOUZA, R. N.; GUAZZELLI, M. A.; GIMENEZ, S. Mitigating MOSFET radiation effects by using the wave layout in analog ICs applications. Journal of Integrated Circuits and Systems, v. 10, n. 1, p. 30-37, sept. 2015.
dc.identifier.issn1872-0234
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/4907
dc.relation.ispartofJournal of Integrated Circuits and Systems
dc.rightsAcesso Restrito
dc.subject.otherlanguageAnalog circuits
dc.subject.otherlanguageRadiation
dc.subject.otherlanguageTID
dc.subject.otherlanguageTotal ionizing dose
dc.subject.otherlanguageWave layout
dc.subject.otherlanguageX-ray
dc.titleMitigating MOSFET radiation effects by using the wave layout in analog ICs applications
dc.typeArtigo
fei.scopus.citations4
fei.scopus.eid2-s2.0-84941121391
fei.scopus.updated2024-07-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84941121391&origin=inward
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