Simulation of OTA's with double-gate graded-channel MOSFETS using the symmetric doped double-gate model

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dc.contributor.authorCENTRERAS, E.
dc.contributor.authorCERDEIRA, A.
dc.contributor.authorMarcelo Antonio Pavanello
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-1361-3650
dc.date.accessioned2022-01-12T22:03:50Z
dc.date.available2022-01-12T22:03:50Z
dc.date.issued2010-01-05
dc.description.abstractIn this paper Operational Transconductance Amplifiers (OTA's) were simulated in SPICE, using the Symmetric Doped Double-Gate Model which includes the capacitances of Double-Gate (DG) transistors. In this work, all the transistors have been simulated using just one model for lightly doped transistor (TLD) and high doped transistor (THd) N-channel devices and P-channel devices. These OTA's show an improvement in the high open-loop voltage gain which is related mainly to the reduction of the drain output conductance which give higher Early voltages for DG GC transistors. ©The Electrochemical Society.
dc.description.firstpage75
dc.description.issuenumber1
dc.description.lastpage81
dc.description.volume31
dc.identifier.citationCENTRERAS, E.; CERDEIRA, A.; PAVANELLO, M. A. Simulation of OTA's with double-gate graded-channel MOSFETS using the symmetric doped double-gate model. ECS Transactions, v. 31, n. 1, p. 75-81, 2010.
dc.identifier.doi10.1149/1.3474144
dc.identifier.issn1938-5862
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/4231
dc.relation.ispartofECS Transactions
dc.rightsAcesso Restrito
dc.titleSimulation of OTA's with double-gate graded-channel MOSFETS using the symmetric doped double-gate model
dc.typeArtigo de evento
fei.scopus.citations3
fei.scopus.eid2-s2.0-79952478398
fei.scopus.subjectDouble-gate
fei.scopus.subjectDouble-gate transistors
fei.scopus.subjectDrain output conductance
fei.scopus.subjectEarly voltage
fei.scopus.subjectMOSFETs
fei.scopus.subjectN-channel devices
fei.scopus.subjectOpen-loop voltage
fei.scopus.subjectOperational trans conductance amplifier
fei.scopus.subjectP channel device
fei.scopus.updated2024-07-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=79952478398&origin=inward
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