The roles of the electric field and the density of carriers in the improved output conductance of junctionless nanowire transistors

Página do item simplificado
dc.contributor.advisorOrcidhttps://orcid.org/0000-0001-6472-4807
dc.contributor.authorRodrigo Doria
dc.contributor.authorMarcelo Antonio Pavanello
dc.contributor.authorTREVISOLI, R. D.
dc.contributor.authorMichelly De Souza
dc.contributor.authorLEE, C. W.
dc.contributor.authorFERAIN, I.
dc.contributor.authorDEHDASHTI AKHAVAN, N.
dc.contributor.authorYAN, R.
dc.contributor.authorRAZAVI, P.
dc.contributor.authorYU, R.
dc.contributor.authorKRANTI, A.
dc.contributor.authorCOLINGE, J. P.
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-1361-3650
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-4448-4337
dc.date.accessioned2022-01-12T22:03:23Z
dc.date.available2022-01-12T22:03:23Z
dc.date.issued2011-01-05
dc.description.abstractThis paper evaluates the roles of the electric field (E) and the density of carries (n) in the drain conductance of Junctionless Nanowire Transistors (JNTs). The behavior of E and n presented by JNTs with the variation of the gate and the drain voltages has been compared to the one presented by Inversion Mode (M) Trigate devices of similar dimensions. It has been shown that the lower drain output conductance exhibited by Junctionless transistors with respect to the IM ones is correlated not only to the differences in the mobility and its degradation but also to the electric field, the density of carries and the first order derivative of these variables with respect the drain voltage. ©The Electrochemical Society.
dc.description.firstpage283
dc.description.issuenumber5
dc.description.lastpage288
dc.description.volume35
dc.identifier.citationDORIA, R.; PAVANELLO, M. A.; TREVISOLI, R. D.; DE SOUZA, M.; LEE, C. W.; FERAIN, I.; DEHDASHTI AKHAVAN, N.; YAN, R.; RAZAVI, P.; YU, R.; KRANTI, A.; COLINGE, J. P. The roles of the electric field and the density of carriers in the improved output conductance of junctionless nanowire transistors. ECS Transactions, v. 35, n. 5, p. 283-288. Jan. 2011.
dc.identifier.doi10.1149/1.3570807
dc.identifier.issn1938-5862
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/4201
dc.relation.ispartofECS Transactions
dc.rightsAcesso Restrito
dc.titleThe roles of the electric field and the density of carriers in the improved output conductance of junctionless nanowire transistors
dc.typeArtigo de evento
fei.scopus.citations1
fei.scopus.eid2-s2.0-79960866224
fei.scopus.subjectDrain conductance
fei.scopus.subjectDrain output conductance
fei.scopus.subjectDrain voltage
fei.scopus.subjectFirst order derivatives
fei.scopus.subjectInversion modes
fei.scopus.subjectNanowire transistors
fei.scopus.subjectOutput conductance
fei.scopus.subjectTrigate
fei.scopus.updated2025-01-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=79960866224&origin=inward
Arquivos
Coleções
Artigos