Comparative study of self-heating effects influence on triple-gate FinFETs fabricated on bulk, SOI and modified substrates

Abstract

This work presents a comparative study of the self-heating effects (SHE) influence on FinFET performance for four different substrates: Bulk, SOI, SDSOI and MSDSOI. The analysis was based on tridimensional numerical simulations and focuses mainly on the analog parameters. Although SOI FinFET devices usually present better performance than the others, when the self-heating was taking into consideration, they showed a degradation of the drain current (I DS) level resulting in a negative slope of IDS and consequently a negative output conductance precluding the intrinsic voltage gain analysis. It is demonstrated that, MSDSOI structure is the most optimized structure for analog applications varying the access window dimension depending on the gate and drain bias. © 2013 IEEE.