Comparative study of self-heating effects influence on triple-gate FinFETs fabricated on bulk, SOI and modified substrates

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dc.contributor.authorD'ANGELO, R.
dc.contributor.authorAGOPIAN, P. G. D.
dc.date.accessioned2022-01-12T22:01:54Z
dc.date.available2022-01-12T22:01:54Z
dc.date.issued2013-09-02
dc.description.abstractThis work presents a comparative study of the self-heating effects (SHE) influence on FinFET performance for four different substrates: Bulk, SOI, SDSOI and MSDSOI. The analysis was based on tridimensional numerical simulations and focuses mainly on the analog parameters. Although SOI FinFET devices usually present better performance than the others, when the self-heating was taking into consideration, they showed a degradation of the drain current (I DS) level resulting in a negative slope of IDS and consequently a negative output conductance precluding the intrinsic voltage gain analysis. It is demonstrated that, MSDSOI structure is the most optimized structure for analog applications varying the access window dimension depending on the gate and drain bias. © 2013 IEEE.
dc.identifier.citationD'ANGELO, R.; AGOPIAN, P. G. D. Comparative study of self-heating effects influence on triple-gate FinFETs fabricated on bulk, SOI and modified substrates. Chip in Curitiba 2013 - SBMicro 2013: 28th Symposium on Microelectronics Technology and Devices, Sept. 2013.
dc.identifier.doi10.1109/SBMicro.2013.6676140
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/4098
dc.relation.ispartofChip in Curitiba 2013 - SBMicro 2013: 28th Symposium on Microelectronics Technology and Devices
dc.rightsAcesso Restrito
dc.subject.otherlanguageFinFETs
dc.subject.otherlanguageModified SOI structures
dc.subject.otherlanguageMultiple Gate Devices
dc.subject.otherlanguageSelf-heating Effect
dc.subject.otherlanguageSOI Technology
dc.titleComparative study of self-heating effects influence on triple-gate FinFETs fabricated on bulk, SOI and modified substrates
dc.typeArtigo de evento
fei.scopus.citations2
fei.scopus.eid2-s2.0-84893455539
fei.scopus.subjectFinFETs
fei.scopus.subjectMultiple gates
fei.scopus.subjectSelf-heating effect
fei.scopus.subjectSOI structure
fei.scopus.subjectSOI technology
fei.scopus.updated2024-07-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84893455539&origin=inward
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