Influence of 45° Substrate Rotation on the Analog Performance of Biaxially Strained-Silicon SOI MuGFETs
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Tipo de produção
Artigo de evento
Data de publicação
2013-05-16
Texto completo (DOI)
Periódico
ECS Transactions
Editor
Texto completo na Scopus
Citações na Scopus
1
Autores
DE SOUZA, M. A. S.
Rodrido Doria
MARTINO, J. A.
SIMOEN, E.
CLAEYS, C.
Marcelo Antonio Pavanello
Orientadores
Resumo
In this work the influence of the substrate rotation on the analog performance of strained SOI MuGFETs is presented. Measurements performed in fabricated devices show a degradation of the maximum transconductance at both linear and saturation regime. The substrate rotation has no influence on the output conductance. The intrinsic voltage gain and the unit gain frequency were extracted and presented a reduction promoted by substrate rotation, being more evident for a narrow fin. © The Electrochemical Society.
Citação
DE SOUZA, M. A. S.; DORIA, R.; MARTINO, J. A.; SIMOEN, E.; CLAEYS, C.; PAVANELLO, M. A. Influence of 45° Substrate Rotation on the Analog Performance of Biaxially Strained-Silicon SOI MuGFETs. ECS Transactions, v. 53, n. 5, p. 161-167, Mayo, 2013.
Palavras-chave
Keywords
Assuntos Scopus
Analog performance; Fabricated device; Gain frequencies; Intrinsic voltage gains; Maximum transconductance; Output conductance; Saturation regime; Substrate rotation