Influence of 45° Substrate Rotation on the Analog Performance of Biaxially Strained-Silicon SOI MuGFETs

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dc.contributor.authorDE SOUZA, M. A. S.
dc.contributor.authorRodrido Doria
dc.contributor.authorMARTINO, J. A.
dc.contributor.authorSIMOEN, E.
dc.contributor.authorCLAEYS, C.
dc.contributor.authorMarcelo Antonio Pavanello
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-4448-4337
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-1361-3650
dc.date.accessioned2022-01-12T22:01:22Z
dc.date.available2022-01-12T22:01:22Z
dc.date.issued2013-05-16
dc.description.abstractIn this work the influence of the substrate rotation on the analog performance of strained SOI MuGFETs is presented. Measurements performed in fabricated devices show a degradation of the maximum transconductance at both linear and saturation regime. The substrate rotation has no influence on the output conductance. The intrinsic voltage gain and the unit gain frequency were extracted and presented a reduction promoted by substrate rotation, being more evident for a narrow fin. © The Electrochemical Society.
dc.description.firstpage161
dc.description.issuenumber5
dc.description.lastpage167
dc.description.volume53
dc.identifier.citationDE SOUZA, M. A. S.; DORIA, R.; MARTINO, J. A.; SIMOEN, E.; CLAEYS, C.; PAVANELLO, M. A. Influence of 45° Substrate Rotation on the Analog Performance of Biaxially Strained-Silicon SOI MuGFETs. ECS Transactions, v. 53, n. 5, p. 161-167, Mayo, 2013.
dc.identifier.doi10.1149/05305.0161ecst
dc.identifier.issn1938-5862
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/4063
dc.relation.ispartofECS Transactions
dc.rightsAcesso Restrito
dc.titleInfluence of 45° Substrate Rotation on the Analog Performance of Biaxially Strained-Silicon SOI MuGFETs
dc.typeArtigo de evento
fei.scopus.citations1
fei.scopus.eid2-s2.0-84885611792
fei.scopus.subjectAnalog performance
fei.scopus.subjectFabricated device
fei.scopus.subjectGain frequencies
fei.scopus.subjectIntrinsic voltage gains
fei.scopus.subjectMaximum transconductance
fei.scopus.subjectOutput conductance
fei.scopus.subjectSaturation regime
fei.scopus.subjectSubstrate rotation
fei.scopus.updated2024-07-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84885611792&origin=inward
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