Influence of 45° Substrate Rotation on the Analog Performance of Biaxially Strained-Silicon SOI MuGFETs

Abstract

In this work the influence of the substrate rotation on the analog performance of strained SOI MuGFETs is presented. Measurements performed in fabricated devices show a degradation of the maximum transconductance at both linear and saturation regime. The substrate rotation has no influence on the output conductance. The intrinsic voltage gain and the unit gain frequency were extracted and presented a reduction promoted by substrate rotation, being more evident for a narrow fin. © The Electrochemical Society.