Analog, RF and nonlinear behaviors of submicron graded channel partially depleted SOI MOSFETs
N/D
Tipo de produção
Artigo de evento
Data de publicação
2009-09-18
Texto completo (DOI)
Periódico
ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference
Editor
Texto completo na Scopus
Citações na Scopus
4
Autores
EMAM, M.
Marcelo Antonio Pavanello
DANNEVILLE, F.
VANHOENACKER-JANVIER, D.
RASKIN, J.-P.
Orientadores
Resumo
The DC, analog and RF behaviors as well as the nonlinear characteristics are shown for the first time for submicron graded channel partially depleted SOl MOSFETs. Previously reported advantages of long graded channel devices are extended for downscaled submicron graded channel devices presented in this work. These advantages cover all aspects of operation, being DC, analog, RF and nonlinear performances, which are investigated in comparison with classical MOS devices. These results are confirmed through robust measurements and accurate characterization techniques supported by well established extraction methods, especially for RF and nonlinear regimes of operation. ©2009 IEEE.
Citação
EMAM, M.; PAVANELLO, M. A.; DANNEVILLE, F.; VANHOENACKER-JANVIER, D.; RASKIN, J.-P. Analog, RF and nonlinear behaviors of submicron graded channel partially depleted SOI MOSFETs. ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference, p. 125-128, Sept. 2009.
Palavras-chave
Keywords
Assuntos Scopus
Characterization techniques; Extraction method; Graded channels; MOSFETs; Non-linear regimes; Nonlinear behavior; Nonlinear characteristics; Partially depleted; Partially depleted SOI MOSFETs; RF behavior; Robust measurement; Submicron