Analog, RF and nonlinear behaviors of submicron graded channel partially depleted SOI MOSFETs

dc.contributor.authorEMAM, M.
dc.contributor.authorMarcelo Antonio Pavanello
dc.contributor.authorDANNEVILLE, F.
dc.contributor.authorVANHOENACKER-JANVIER, D.
dc.contributor.authorRASKIN, J.-P.
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-1361-3650
dc.date.accessioned2022-01-12T22:04:33Z
dc.date.available2022-01-12T22:04:33Z
dc.date.issued2009-09-18
dc.description.abstractThe DC, analog and RF behaviors as well as the nonlinear characteristics are shown for the first time for submicron graded channel partially depleted SOl MOSFETs. Previously reported advantages of long graded channel devices are extended for downscaled submicron graded channel devices presented in this work. These advantages cover all aspects of operation, being DC, analog, RF and nonlinear performances, which are investigated in comparison with classical MOS devices. These results are confirmed through robust measurements and accurate characterization techniques supported by well established extraction methods, especially for RF and nonlinear regimes of operation. ©2009 IEEE.
dc.description.firstpage125
dc.description.lastpage128
dc.identifier.citationEMAM, M.; PAVANELLO, M. A.; DANNEVILLE, F.; VANHOENACKER-JANVIER, D.; RASKIN, J.-P. Analog, RF and nonlinear behaviors of submicron graded channel partially depleted SOI MOSFETs. ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference, p. 125-128, Sept. 2009.
dc.identifier.doi10.1109/ESSDERC.2009.5331397
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/4278
dc.relation.ispartofESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference
dc.rightsAcesso Restrito
dc.titleAnalog, RF and nonlinear behaviors of submicron graded channel partially depleted SOI MOSFETs
dc.typeArtigo de evento
fei.scopus.citations4
fei.scopus.eid2-s2.0-72849108279
fei.scopus.subjectCharacterization techniques
fei.scopus.subjectExtraction method
fei.scopus.subjectGraded channels
fei.scopus.subjectMOSFETs
fei.scopus.subjectNon-linear regimes
fei.scopus.subjectNonlinear behavior
fei.scopus.subjectNonlinear characteristics
fei.scopus.subjectPartially depleted
fei.scopus.subjectPartially depleted SOI MOSFETs
fei.scopus.subjectRF behavior
fei.scopus.subjectRobust measurement
fei.scopus.subjectSubmicron
fei.scopus.updated2024-05-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=72849108279&origin=inward
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