Temperature and silicon film thickness influence on the operation of lateral SOI PIN photodiodes for detection of short wavelengths

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dc.contributor.advisorOrcidhttps://orcid.org/0000-0001-6472-4807
dc.contributor.authorMichelly De Souza
dc.contributor.authorBULTEEL, O.
dc.contributor.authorFLANDRE, D.
dc.contributor.authorMarcelo Antonio Pavanello
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-1361-3650
dc.date.accessioned2023-08-26T23:49:30Z
dc.date.available2023-08-26T23:49:30Z
dc.date.issued2011-09-05
dc.description.abstractThis work presents an analysis of the temperature influence on the performance of a lateral thin-film SOI PIN photodiodes when illuminated by low wavelengths, in the range of blue and ultra-violet (UV). Experimental measurements performed from 100K to 400K showed that the optical responsitivity of SOI PIN photodetectors is affected by temperature change, being reduced at low and moderately high temperatures. Two-dimensional numerical simulations showed the same trends as in the experimental results, and were used both to investigate the physical phenomena responsible for the observed behavior as a function of the temperature as well as to predict the influence of silicon film thickness downscaling on the photodetector performance.
dc.description.firstpage107
dc.description.issuenumber2
dc.description.lastpage113
dc.description.volume6
dc.identifier.citationDE SOUZA, M.; BULTEEL, O.; FLANDRE, D. PAVANELLO, M. A. Temperature and silicon film thickness influence on the operation of lateral SOI PIN photodiodes for detection of short wavelengths. Journal of Integrated Circuits and Systems, v. 6, n. 2, p. 107-113, sept. 2011.
dc.identifier.issn1807-1953
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/4977
dc.relation.ispartofJournal of Integrated Circuits and Systems
dc.rightsAcesso Restrito
dc.subject.otherlanguagePhotodetector
dc.subject.otherlanguagePIN diodes
dc.subject.otherlanguageSilicon-on-insulator
dc.subject.otherlanguageTemperature
dc.titleTemperature and silicon film thickness influence on the operation of lateral SOI PIN photodiodes for detection of short wavelengths
dc.typeArtigo
fei.scopus.citations15
fei.scopus.eid2-s2.0-82255170681
fei.scopus.updated2024-12-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=82255170681&origin=inward
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