Analysis of the output conductance degradation with the substrate bias in SOI UTB and UTBB transistors

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dc.contributor.authorFERNO COSTA, J.
dc.contributor.authorTREVISOLI, R.
dc.contributor.authorRodrigo Doria
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-4448-4337
dc.date.accessioned2022-01-12T21:57:03Z
dc.date.available2022-01-12T21:57:03Z
dc.date.issued2018-08-31
dc.description.abstract© 2018 IEEE.The goal of this work is to present the behavior of the output conductance in Ultra-Thin Body (UTB) and Ultra-Thin Body and Buried Oxide (UTBB) SOI {MOSFETs with the application of a selected set of back gate biases (VSUB) through AC simulations, in devices with and without considering the effect of the ground plane. It has been shown that the output conductance degradation due to self-heating and substrate effects increases as the substrate bias is reduced. The output conductance degradation by self-heating presents a reduction of about 52% and by substrate effects of 57% by simply increasing the back bias from-2V up to 2 V.
dc.identifier.citationFERNO COSTA, J.; TREVISOLI, R.; DORIA, R. Analysis of the output conductance degradation with the substrate bias in SOI UTB and UTBB transistors. 33rd Symposium on Microelectronics Technology and Devices, SBMicro 2018, 2018.
dc.identifier.doi10.1109/SBMicro.2018.8511618
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/3766
dc.relation.ispartof33rd Symposium on Microelectronics Technology and Devices, SBMicro 2018
dc.rightsAcesso Restrito
dc.subject.otherlanguageOutput Conductance
dc.subject.otherlanguageSelf-Heating Effect
dc.subject.otherlanguageSOI Technology
dc.subject.otherlanguageUTB
dc.subject.otherlanguageUTBB
dc.titleAnalysis of the output conductance degradation with the substrate bias in SOI UTB and UTBB transistors
dc.typeArtigo de evento
fei.scopus.citations4
fei.scopus.eid2-s2.0-85057415053
fei.scopus.subjectBack-gate bias
fei.scopus.subjectEffect of the ground
fei.scopus.subjectOutput conductance
fei.scopus.subjectSelf-heating effect
fei.scopus.subjectSOI technology
fei.scopus.subjectSubstrate effects
fei.scopus.subjectUltra-thin-body
fei.scopus.subjectUTBB
fei.scopus.updated2024-07-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85057415053&origin=inward
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