Temperature dependence of the electrical characteristics up to 370 K of amorphous In-Ga-ZnO thin film transistors
dc.contributor.author | Estrada M. | |
dc.contributor.author | Rivas M. | |
dc.contributor.author | Garduno I. | |
dc.contributor.author | Avila-Herrera F. | |
dc.contributor.author | Cerdeira A. | |
dc.contributor.author | Pavanello M. | |
dc.contributor.author | Mejia I. | |
dc.contributor.author | Quevedo-Lopez M.A. | |
dc.date.accessioned | 2019-08-19T23:45:11Z | |
dc.date.available | 2019-08-19T23:45:11Z | |
dc.date.issued | 2016 | |
dc.description.abstract | © 2015 Elsevier Ltd.The temperature dependence in the typical temperature operating range from300 K up to 370 K of the electrical characteristics of IGZO TFTs fabricated at temperatures not exceeding 200 °C is presented and modeled. It is seen that up to T = 330 K, the transfer curves show a parallel shift toward more negative voltages. In both subthreshold and above threshold regimes, the drain current shows Arrhenius-type dependence. In the latter case, for low temperatures, the activation energy is around 0.35 eV for VGS=10 V, reducing as VGS is increased. The observed behavior is consistent with having the VRH transport mechanism as the predominant one in conduction. | |
dc.description.firstpage | 29 | |
dc.description.lastpage | 33 | |
dc.description.volume | 56 | |
dc.identifier.citation | ESTRADA, M.; RIVAS, M.; GARDUÑO, I.; AVILA-HERRERA, F.; CERDEIRA, A.; PAVANELLO, M.; MEJIA, I.; QUEVEDO-LOPEZ, M.A.. Temperature dependence of the electrical characteristics up to 370K of amorphous In-Ga-ZnO thin film transistors. Microelectronics and Reliability, v. 56, p. 29-33, 2016. | |
dc.identifier.doi | 10.1016/j.microrel.2015.10.015 | |
dc.identifier.issn | 0026-2714 | |
dc.identifier.uri | https://repositorio.fei.edu.br/handle/FEI/1109 | |
dc.relation.ispartof | Microelectronics Reliability | |
dc.rights | Acesso Aberto | |
dc.subject.otherlanguage | IGZO TFTs | |
dc.subject.otherlanguage | Temperature dependence | |
dc.title | Temperature dependence of the electrical characteristics up to 370 K of amorphous In-Ga-ZnO thin film transistors | |
dc.type | Artigo | |
fei.scopus.citations | 18 | |
fei.scopus.eid | 2-s2.0-84954074341 | |
fei.scopus.subject | Electrical characteristic | |
fei.scopus.subject | Igzo tfts | |
fei.scopus.subject | Low temperatures | |
fei.scopus.subject | Negative voltage | |
fei.scopus.subject | Operating ranges | |
fei.scopus.subject | Temperature dependence | |
fei.scopus.subject | Transfer curves | |
fei.scopus.subject | Transport mechanism | |
fei.scopus.updated | 2024-07-01 | |
fei.scopus.url | https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84954074341&origin=inward |