Temperature dependence of the electrical characteristics up to 370 K of amorphous In-Ga-ZnO thin film transistors

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dc.contributor.authorEstrada M.
dc.contributor.authorRivas M.
dc.contributor.authorGarduno I.
dc.contributor.authorAvila-Herrera F.
dc.contributor.authorCerdeira A.
dc.contributor.authorPavanello M.
dc.contributor.authorMejia I.
dc.contributor.authorQuevedo-Lopez M.A.
dc.date.accessioned2019-08-19T23:45:11Z
dc.date.available2019-08-19T23:45:11Z
dc.date.issued2016
dc.description.abstract© 2015 Elsevier Ltd.The temperature dependence in the typical temperature operating range from300 K up to 370 K of the electrical characteristics of IGZO TFTs fabricated at temperatures not exceeding 200 °C is presented and modeled. It is seen that up to T = 330 K, the transfer curves show a parallel shift toward more negative voltages. In both subthreshold and above threshold regimes, the drain current shows Arrhenius-type dependence. In the latter case, for low temperatures, the activation energy is around 0.35 eV for VGS=10 V, reducing as VGS is increased. The observed behavior is consistent with having the VRH transport mechanism as the predominant one in conduction.
dc.description.firstpage29
dc.description.lastpage33
dc.description.volume56
dc.identifier.citationESTRADA, M.; RIVAS, M.; GARDUÑO, I.; AVILA-HERRERA, F.; CERDEIRA, A.; PAVANELLO, M.; MEJIA, I.; QUEVEDO-LOPEZ, M.A.. Temperature dependence of the electrical characteristics up to 370K of amorphous In-Ga-ZnO thin film transistors. Microelectronics and Reliability, v. 56, p. 29-33, 2016.
dc.identifier.doi10.1016/j.microrel.2015.10.015
dc.identifier.issn0026-2714
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/1109
dc.relation.ispartofMicroelectronics Reliability
dc.rightsAcesso Aberto
dc.subject.otherlanguageIGZO TFTs
dc.subject.otherlanguageTemperature dependence
dc.titleTemperature dependence of the electrical characteristics up to 370 K of amorphous In-Ga-ZnO thin film transistors
dc.typeArtigo
fei.scopus.citations17
fei.scopus.eid2-s2.0-84954074341
fei.scopus.subjectElectrical characteristic
fei.scopus.subjectIgzo tfts
fei.scopus.subjectLow temperatures
fei.scopus.subjectNegative voltage
fei.scopus.subjectOperating ranges
fei.scopus.subjectTemperature dependence
fei.scopus.subjectTransfer curves
fei.scopus.subjectTransport mechanism
fei.scopus.updated2024-03-04
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84954074341&origin=inward
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