Performance of electronic devices submitted to X-rays and high energy proton beams

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dc.contributor.authorSilveira M.A.G.
dc.contributor.authorCirne K.H.
dc.contributor.authorSantos R.B.B.
dc.contributor.authorGimenez S.P.
dc.contributor.authorMedina N.H.
dc.contributor.authorAdded N.
dc.contributor.authorTabacniks M.H.
dc.contributor.authorBarbosa M.D.L.
dc.contributor.authorSeixas L.E.
dc.contributor.authorMelo W.
dc.contributor.authorDe Lima J.A.
dc.date.accessioned2019-08-19T23:47:18Z
dc.date.available2019-08-19T23:47:18Z
dc.date.issued2012
dc.description.abstractIn this work we have studied the radiation effects on MOSFET electronic devices. The integrated circuits were exposed to 10 keV X-ray radiation and 2.6 MeV energy proton beam. We have irradiated MOSFET devices with two different geometries: rectangular-gate transistor and circular-gate transistor. We have observed the cumulative dose provokes shifts on the threshold voltage and increases or decreases the transistor's off-state and leakage current. The position of the trapped charges in modern CMOS technology devices depends on radiation type, dose rate, total dose, applied bias and is a function of device geometry. We concluded the circular-gate transistor is more tolerant to radiation than the rectangular-gate transistor. © 2011 Elsevier B.V. All rights reserved.
dc.description.firstpage135
dc.description.lastpage138
dc.description.volume273
dc.identifier.citationSilveira, M.A.G.; Melo, W.; de Lima, J.A.; Cirne, K.H.; Santos, R.B.B.; Gimenez, S.P.; Medina, N.H.; ADDED, N.; Tabacniks, M.H.; Barbosa, M.D.L.; Seixas, L.E.. Performance of electronic devices submitted to X-rays and high energy proton beams. Nuclear Instruments & Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms (Print), v. 273, p. 135-138, 2012.
dc.identifier.doi10.1016/j.nimb.2011.07.058
dc.identifier.issn0168-583X
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/1447
dc.relation.ispartofNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
dc.rightsAcesso Restrito
dc.subject.otherlanguageElectronic devices
dc.subject.otherlanguageMOSFET
dc.subject.otherlanguageProton beam
dc.subject.otherlanguageRadiation effects
dc.subject.otherlanguageTotal ionizing dose (TID)
dc.subject.otherlanguageTrapped charge
dc.subject.otherlanguageX-ray
dc.titlePerformance of electronic devices submitted to X-rays and high energy proton beams
dc.typeArtigo de evento
fei.scopus.citations13
fei.scopus.eid2-s2.0-84856103537
fei.scopus.subjectApplied bias
fei.scopus.subjectCMOS technology
fei.scopus.subjectDevice geometries
fei.scopus.subjectDifferent geometry
fei.scopus.subjectDose rate
fei.scopus.subjectElectronic device
fei.scopus.subjectHigh energy proton beams
fei.scopus.subjectMeV energy
fei.scopus.subjectMOS-FET
fei.scopus.subjectTotal dose
fei.scopus.subjectTotal ionizing dose
fei.scopus.subjectTrapped charge
fei.scopus.subjectX ray radiation
fei.scopus.updated2024-10-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84856103537&origin=inward
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