A simple electron mobility model considering the impact of silicon-dielectric interface orientation for surrounding gate devices

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dc.contributor.authorPERIN, A. L.
dc.contributor.authorPEREIRA, A. S. N.
dc.contributor.authorAGOPIAN, P. G. D.
dc.contributor.authorMARTINO, J. A.
dc.contributor.authorRenato Giacomini
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-1060-2649
dc.date.accessioned2022-01-12T22:03:13Z
dc.date.available2022-01-12T22:03:13Z
dc.date.issued2011-09-02
dc.description.abstractIn this work, we present a simple mobility model that takes into account the variation of the carrier's mobility according to crystallographic orientations of the silicon-dielectric interface. The effective mobility of simulated devices was compared to experimental data for several interface orientations and showed good agreement. The model has been applied to a CYNTHIA nMOS transistor and allowed the observation of non-uniform current density around the silicon pillar due to electron mobility variation. ©The Electrochemical Society.
dc.description.firstpage179
dc.description.issuenumber1
dc.description.lastpage186
dc.description.volume39
dc.identifier.citationPERIN, A. L.; PEREIRA, A. S. N.; AGOPIAN, P. G. D.;MARTINO, J. A.; GIACOMINI. R. A simple electron mobility model considering the impact of silicon-dielectric interface orientation for surrounding gate devices. ECS Transactions, v. 39, n. 1, p. 179-186, September, 2011.
dc.identifier.doi10.1149/1.3615192
dc.identifier.issn1938-5862
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/4189
dc.relation.ispartofECS Transactions
dc.rightsAcesso Restrito
dc.titleA simple electron mobility model considering the impact of silicon-dielectric interface orientation for surrounding gate devices
dc.typeArtigo de evento
fei.scopus.citations0
fei.scopus.eid2-s2.0-84856919213
fei.scopus.subjectCrystallographic orientations
fei.scopus.subjectEffective mobilities
fei.scopus.subjectExperimental data
fei.scopus.subjectInterface orientation
fei.scopus.subjectMobility model
fei.scopus.subjectMobility variation
fei.scopus.subjectNMOS transistors
fei.scopus.subjectSilicon pillar
fei.scopus.subjectSurrounding-gate
fei.scopus.updated2024-07-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84856919213&origin=inward
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