Applicability of charge pumping technique for evaluating the effect of interface traps in junctionless nanowire transistors
N/D
Tipo de produção
Artigo de evento
Data de publicação
2019-08-30
Texto completo (DOI)
Periódico
SBMicro 2019 - 34th Symposium on Microelectronics Technology and Devices
Editor
Texto completo na Scopus
Citações na Scopus
1
Autores
FONTE, E. T.
TREVISOLI, R.
Rodrido Doria
Orientadores
Resumo
© 2019 IEEE.A study of Junctionless Nanowire Transistors (JNTs) is presented in this work, with emphasis on verifying the applicability of the charge pumping method for the analysis of interface traps. To the best of our knowledge, this is the first work to use this method in JNTs. The first step is the analysis of the performance using numerical simulations. It is stated that a transient current is observed in the devices with the charge pumping method application and increases with the trap density. Simulated and experimental data of Junctionless Nanowire Transistors show how this method can be useful and its applicability to verify the JNTs interface quality.
Citação
FONTE, E. T.; TREVISOLI, R.; DORIA, R.Applicability of charge pumping technique for evaluating the effect of interface traps in junctionless nanowire transistors. SBMicro 2019 - 34th Symposium on Microelectronics Technology and Devices, Aug. 2019.
Palavras-chave
Keywords
Charge pumping; Interface traps; Junctionless nanowire transistors; SOI Technology
Assuntos Scopus
Charge pumping; Charge pumping method; Charge pumping technique; Interface quality; Interface traps; Nanowire transistors; SOI technology; Transient current