Repositório do Conhecimento Institucional do Centro Universitário FEI
 

Applicability of charge pumping technique for evaluating the effect of interface traps in junctionless nanowire transistors

N/D

Tipo de produção

Artigo de evento

Data de publicação

2019-08-30

Texto completo (DOI)

Periódico

SBMicro 2019 - 34th Symposium on Microelectronics Technology and Devices

Editor

Citações na Scopus

1

Autores

FONTE, E. T.
TREVISOLI, R.
Rodrido Doria

Orientadores

Resumo

© 2019 IEEE.A study of Junctionless Nanowire Transistors (JNTs) is presented in this work, with emphasis on verifying the applicability of the charge pumping method for the analysis of interface traps. To the best of our knowledge, this is the first work to use this method in JNTs. The first step is the analysis of the performance using numerical simulations. It is stated that a transient current is observed in the devices with the charge pumping method application and increases with the trap density. Simulated and experimental data of Junctionless Nanowire Transistors show how this method can be useful and its applicability to verify the JNTs interface quality.

Citação

FONTE, E. T.; TREVISOLI, R.; DORIA, R.Applicability of charge pumping technique for evaluating the effect of interface traps in junctionless nanowire transistors. SBMicro 2019 - 34th Symposium on Microelectronics Technology and Devices, Aug. 2019.

Palavras-chave

Keywords

Charge pumping; Interface traps; Junctionless nanowire transistors; SOI Technology

Assuntos Scopus

Charge pumping; Charge pumping method; Charge pumping technique; Interface quality; Interface traps; Nanowire transistors; SOI technology; Transient current

Coleções

Avaliação

Revisão

Suplementado Por

Referenciado Por