Applicability of charge pumping technique for evaluating the effect of interface traps in junctionless nanowire transistors

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dc.contributor.authorFONTE, E. T.
dc.contributor.authorTREVISOLI, R.
dc.contributor.authorRodrido Doria
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-4448-4337
dc.date.accessioned2022-01-12T21:56:19Z
dc.date.available2022-01-12T21:56:19Z
dc.date.issued2019-08-30
dc.description.abstract© 2019 IEEE.A study of Junctionless Nanowire Transistors (JNTs) is presented in this work, with emphasis on verifying the applicability of the charge pumping method for the analysis of interface traps. To the best of our knowledge, this is the first work to use this method in JNTs. The first step is the analysis of the performance using numerical simulations. It is stated that a transient current is observed in the devices with the charge pumping method application and increases with the trap density. Simulated and experimental data of Junctionless Nanowire Transistors show how this method can be useful and its applicability to verify the JNTs interface quality.
dc.identifier.citationFONTE, E. T.; TREVISOLI, R.; DORIA, R.Applicability of charge pumping technique for evaluating the effect of interface traps in junctionless nanowire transistors. SBMicro 2019 - 34th Symposium on Microelectronics Technology and Devices, Aug. 2019.
dc.identifier.doi10.1109/SBMicro.2019.8919464
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/3717
dc.relation.ispartofSBMicro 2019 - 34th Symposium on Microelectronics Technology and Devices
dc.rightsAcesso Restrito
dc.subject.otherlanguageCharge pumping
dc.subject.otherlanguageInterface traps
dc.subject.otherlanguageJunctionless nanowire transistors
dc.subject.otherlanguageSOI Technology
dc.titleApplicability of charge pumping technique for evaluating the effect of interface traps in junctionless nanowire transistors
dc.typeArtigo de evento
fei.scopus.citations1
fei.scopus.eid2-s2.0-85077218575
fei.scopus.subjectCharge pumping
fei.scopus.subjectCharge pumping method
fei.scopus.subjectCharge pumping technique
fei.scopus.subjectInterface quality
fei.scopus.subjectInterface traps
fei.scopus.subjectNanowire transistors
fei.scopus.subjectSOI technology
fei.scopus.subjectTransient current
fei.scopus.updated2024-12-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85077218575&origin=inward
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