Impact of the series resistance in the I-V characteristics of junctionless nanowire transistors and its dependence on the temperature

Página do item simplificado
dc.contributor.authorRodrigo Doria
dc.contributor.authorTREVISOLI, R. D.
dc.contributor.authorMichelly De Souza
dc.contributor.authorMarcelo Antonio Pavanello
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-4448-4337
dc.contributor.authorOrcidhttps://orcid.org/0000-0001-6472-4807
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-1361-3650
dc.date.accessioned2023-08-26T23:49:12Z
dc.date.available2023-08-26T23:49:12Z
dc.date.issued2012-01-05
dc.description.abstractThe effect of the source/drain parasitic resistance (R S) on the I-V characteristics of Junctionless Nanowire Transistors (JNTs) has been evaluated through experimental and simulated data. The impact of several parameters such as the temperature, the fin width, the total doping concentration, the source/drain length and the source/drain doping concentration on R S has been addressed. The source/drain parasitic resistance presented by JNTs was compared to the one presented by classical inversion mode (IM) triple gate devices, showing opposite behavior with the temperature variation in IM triple transistors and JNTs. In the latter, a reduction on R S is noted with the temperature increase, which is related to the incomplete ionization. This effect inhibits the presence of a Zero Temperature Coefficient (ZTC) operation bias in the Junctionless devices.
dc.description.firstpage121
dc.description.issuenumber1
dc.description.lastpage129
dc.description.volume7
dc.identifier.citationDORIA, R.; TREVISOLI, R. D.; DE SOUZA, M.; PAVANELLO, M. A. Impact of the series resistance in the I-V characteristics of junctionless nanowire transistors and its dependence on the temperature. Journal of Integrated Circuits and Systems, v. 7, n. 1, p. 121-129, 2012.
dc.identifier.issn1807-1953
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/4959
dc.relation.ispartofJournal of Integrated Circuits and Systems
dc.rightsAcesso Restrito
dc.subject.otherlanguageIncomplete ionization
dc.subject.otherlanguageJunctionless
dc.subject.otherlanguageSeries resistance
dc.subject.otherlanguageZero temperature coefficient
dc.titleImpact of the series resistance in the I-V characteristics of junctionless nanowire transistors and its dependence on the temperature
dc.typeArtigo
fei.scopus.citations53
fei.scopus.eid2-s2.0-84870043136
fei.scopus.updated2024-05-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84870043136&origin=inward
Arquivos
Pacote Original
Agora exibindo 1 - 1 de 1
Nenhuma Miniatura disponível
Nome:
Pavanello_pdf
Tamanho:
1.19 MB
Formato:
Adobe Portable Document Format
Baixar
Coleções
Artigos