Experimental study of the OCTO SOI nMOSFET and its application in analog integrated circuits

Página do item simplificado
dc.contributor.authorFINO, L. N. D. S.
dc.contributor.authorRENAUX, C.
dc.contributor.authorFLANDRE, D.
dc.contributor.authorSalvador Gimenez
dc.contributor.authorOrcidhttps://orcid.org/0000-0002-3616-9559
dc.date.accessioned2022-01-12T22:02:46Z
dc.date.available2022-01-12T22:02:46Z
dc.date.issued2012-09-02
dc.description.abstractThis paper presents an experimental comparative study between the OCTO, Diamond and Conventional Silicon-On-Insulator nMOSFETs (OSM, DSM and CSM, respectively), considering the same bias condition for all devices. The first comparison between the OSM and the CSM counterpart considers the same gate area and the second between the OSM and DSM regards the same geometric factor, in order to verify the benefits of the octagonal gate geometry, that uses the longitudinal corner effect to increase the resultant longitudinal electric field along of the channel, to improve the device performance and consequently to enhance the performance of analog integrated circuits. These characteristics can be observed on the main analog parameters such as drain current in saturation region, maximum transconductance, transconductance by drain current, voltage gain, unity voltage gain frequency and Early voltage. © The Electrochemical Society.
dc.description.firstpage527
dc.description.issuenumber1
dc.description.lastpage534
dc.description.volume49
dc.identifier.citationFINO, L. N. D. S.; RENAUX, C.; FLANDRE, D.; GIMENEZ, S. Experimental study of the OCTO SOI nMOSFET and its application in analog integrated circuits. ECS Transactions, v. 49, n. 1, p. 527-534, Sept., 2012.
dc.identifier.doi10.1149/04901.0527ecst
dc.identifier.issn1938-6737
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/4158
dc.relation.ispartofECS Transactions
dc.rightsAcesso Restrito
dc.titleExperimental study of the OCTO SOI nMOSFET and its application in analog integrated circuits
dc.typeArtigo de evento
fei.scopus.citations8
fei.scopus.eid2-s2.0-84875850681
fei.scopus.subjectAnalog parameters
fei.scopus.subjectBias conditions
fei.scopus.subjectComparative studies
fei.scopus.subjectDevice performance
fei.scopus.subjectGeometric factors
fei.scopus.subjectITS applications
fei.scopus.subjectMaximum transconductance
fei.scopus.subjectSaturation region
fei.scopus.updated2024-07-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84875850681&origin=inward
Arquivos
Coleções
Artigos