Fin dimension influence on mechanical stressors in triple-gate SOI nMOSFETs

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dc.contributor.authorBÜHLER, Rudolf Theoderich
dc.contributor.authorSIMOEN, E.
dc.contributor.authorAGOPIAN, P. G. D.
dc.contributor.authorCLAEYS, C.
dc.contributor.authorMARTINO, J. A.
dc.contributor.authorOrcidhttps://orcid.org/0000-0002-7934-9605
dc.date.accessioned2022-01-12T22:01:23Z
dc.date.available2022-01-12T22:01:23Z
dc.date.issued2013-05-16
dc.description.abstractThis work studies the SiGe SRB and tCESL strained triple-gate SOI nMOSFETs using experimental devices and also process and device numerical simulations. The transconductance and mobility are investigated and analyzed with the strain data obtained from process simulations, including the influence of the fin dimensions on the strain. The use of SiGe SRB and tCESL strain combined resulted in higher strain and higher maximum transconductance. © The Electrochemical Society.
dc.description.firstpage187
dc.description.issuenumber5
dc.description.lastpage192
dc.description.volume53
dc.identifier.citationBÜHLER, R. T.; SIMOEN, E.; AGOPIAN, P. G. D.; CLAEYS, C.; MARTINO, J. A. Fin dimension influence on mechanical stressors in triple-gate SOI nMOSFETs. ECS Transactions, v. 53, n. 5, p. 187-192, Mayo, 2013.
dc.identifier.doi10.1149/05305.0187ecst
dc.identifier.issn1938-5862
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/4064
dc.relation.ispartofECS Transactions
dc.rightsAcesso Restrito
dc.titleFin dimension influence on mechanical stressors in triple-gate SOI nMOSFETs
dc.typeArtigo de evento
fei.scopus.citations0
fei.scopus.eid2-s2.0-84885595832
fei.scopus.subjectExperimental devices
fei.scopus.subjectFin dimensions
fei.scopus.subjectMaximum transconductance
fei.scopus.subjectProcess simulations
fei.scopus.subjectSOI n-MOSFETs
fei.scopus.subjectStrain data
fei.scopus.subjectTriple-gate
fei.scopus.subjectWork study
fei.scopus.updated2024-07-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84885595832&origin=inward
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