Study of the linear kink effect in PD SOI nMOSFETs

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dc.contributor.authorAGOPIAN, P. G. D.
dc.contributor.authorMARTINO, J. A.
dc.contributor.authorSIMOEN, E.
dc.contributor.authorCLAEYS, C.
dc.date.accessioned2022-01-12T22:05:29Z
dc.date.available2022-01-12T22:05:29Z
dc.date.issued2007-01-05
dc.description.abstractWe present in this work a study of the linear kink effect (LKE) occurrence in partially depleted (PD) SOI nMOSFETs with thin gate oxide. The experimental LKE dependence on the channel length, channel width and drain voltage are reported as well as the impact of various parameters on the second peak has been studied by two-dimensional numerical simulations, namely, the gate current level, the carrier lifetime, the increase of the body potential, the threshold voltage variation and AC analysis. Three-dimensional simulations were also performed in order to evaluate the LKE dependence on the channel width. © 2006 Elsevier Ltd. All rights reserved.
dc.description.firstpage114
dc.description.issuenumber1
dc.description.lastpage119
dc.description.volume38
dc.identifier.citationAGOPIAN, P. G. D.; MARTINO, J. A.; SIMOEN, E.; CLAEYS, C. Study of the linear kink effect in PD SOI nMOSFETs. Microelectronics Journal, v. 38, n. 1, p. 114-119, Jan. 2007.
dc.identifier.doi10.1016/j.mejo.2006.09.005
dc.identifier.issn0026-2692
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/4342
dc.relation.ispartofMicroelectronics Journal
dc.rightsAcesso Restrito
dc.subject.otherlanguageBody potential
dc.subject.otherlanguageGate current
dc.subject.otherlanguageNumerical simulations
dc.subject.otherlanguageSOI nMOSFET
dc.subject.otherlanguageThin gate oxide
dc.titleStudy of the linear kink effect in PD SOI nMOSFETs
dc.typeArtigo
fei.scopus.citations9
fei.scopus.eid2-s2.0-33845269347
fei.scopus.subjectBody potential
fei.scopus.subjectGate currents
fei.scopus.subjectSOI nMOSFET
fei.scopus.subjectThin gate oxides
fei.scopus.updated2024-07-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=33845269347&origin=inward
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