Early voltage behavior in circular gate SOI nMOSFET using 0.13 μm partially-depleted SOI CMOS technology
N/D
Tipo de produção
Artigo de evento
Data de publicação
2006-09-01
Periódico
ECS Transactions
Editor
Texto completo na Scopus
Citações na Scopus
9
Autores
Salvador Gimenez
FERREIRA, R. M. G.
Joao Antonio Martino
Orientadores
Resumo
This paper studies the Early voltage behavior in circular gate partially-depleted SOI nMOSFET. The drain/source asymmetric effects are considered in terms of drain current as a function of the gate and drain voltages. Drain current comparisons with rectangular gate partially-depleted SOI nMOSFET are performed, regarding the same effective channel length and width. Experimental results and three-dimensional simulations are used to qualify the results. © 2006 The Electrochemical Society.
Citação
GIMENEZ, S.; FERREIRA, R. M. G.; MARTINO. J. A. Early voltage behavior in circular gate SOI nMOSFET using 0.13 μm partially-depleted SOI CMOS technology. ECS Transactions, v. 4, n. 1, p. 309-318, sept. 2006.
Palavras-chave
Keywords
Assuntos Scopus
Asymmetric effects; Drain voltages; Early voltage behavior; Three dimensional simulations