Low-Frequency Noise of nMOS and pMOS short channel junctionless nanowire transistors

Página do item simplificado
dc.contributor.advisorhttps://orcid.org/0000-0003-4448-4337
dc.contributor.authorRodrido Doria
dc.contributor.authorTREVISOLI, R. D.
dc.contributor.authorMichelly De Souza
dc.contributor.authorFERAIN, I.
dc.contributor.authorDAS, S.
dc.contributor.authorMarcelo Antonio Pavanello
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-1361-3650
dc.contributor.authorOrcidhttps://orcid.org/0000-0001-6472-4807
dc.date.accessioned2022-01-12T22:02:15Z
dc.date.available2022-01-12T22:02:15Z
dc.date.issued2012-10-04
dc.description.abstractMulti-gate architecture has been considered as one of the most viable alternatives to MOS devices scaling below 22 nm nodes [1] due to its stronger robustness to the short channel effects with respect to planar architectures. In short channel devices, the control of the gate over the channel charges dramatically decreases making the use of planar devices extremely challenging. Despite providing an improved coupling between gates and channel, conventional inversion mode (IM) multi-gate structures such as Trigate and FinFETs present p-n junctions between source/drain and channel, which can become an important bottleneck for ultimate technologies in which the formation of ultra-sharp junctions is needed in order to avoid the source/drain dopants diffusion into the channel. A novel multi-gate architecture so-called Junctionless Nanowire Transistor (JNT) was recently developed to overcome this bottleneck [2-3]. The JNT consists of a silicon nanowire surrounded by gate stack and is different from multi-gate IM devices due to its doping profile which is heavy and constant between source, channel and drain without any dopant gradients. The longitudinal sections of both a pMOS and an nMOS JNT are shown in Fig. 1 where the p-type is doped with boron and the n-type ones with phosphorous. The silicon nanowire needs to have a square-section small enough to be fully depleted at low gate voltages, turning off the device. Above threshold, the current flows mainly due to bulk conduction [4]. Several papers have shown the potentiality of the JNT for technological nodes beyond 10 nm [2-6] since it provides better DIBL, subthreshold slope and analog properties than IM multi-gate transistors of similar dimensions [5,6]. Although the Low-Frequency Noise (LFN) of JNTs has been treated in different papers [7,8], only long devices have been evaluated up to now and in none of them the LFN of pMOS was addressed as proposed in the current paper. © 2012 IEEE.
dc.identifier.citationDORIA, R.; TREVISOLI, R. D.; DE SOUZA, M.; FERAIN, I.; DAS, S.; PAVANELLO, M. A. Low-Frequency Noise of nMOS and pMOS short channel junctionless nanowire transistors. Proceedings - IEEE International SOI Conference. Oct. 2012.
dc.identifier.doi10.1109/SOI.2012.6404379
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/4122
dc.relation.ispartofProceedings - IEEE International SOI Conference
dc.rightsAcesso Restrito
dc.titleLow-Frequency Noise of nMOS and pMOS short channel junctionless nanowire transistors
dc.typeArtigo de evento
fei.scopus.citations7
fei.scopus.eid2-s2.0-84873542678
fei.scopus.subjectBulk conduction
fei.scopus.subjectChannel charge
fei.scopus.subjectCurrent flows
fei.scopus.subjectDoping profiles
fei.scopus.subjectFinFETs
fei.scopus.subjectFully depleted
fei.scopus.subjectGate stacks
fei.scopus.subjectGate voltages
fei.scopus.subjectInversion modes
fei.scopus.subjectJunctionless
fei.scopus.subjectJunctionless nanowire transistors (JNT)
fei.scopus.subjectLongitudinal section
fei.scopus.subjectLow-Frequency Noise
fei.scopus.subjectMulti-gates
fei.scopus.subjectNanowire transistors
fei.scopus.subjectP-n junction
fei.scopus.subjectP-type
fei.scopus.subjectPlanar architecture
fei.scopus.subjectPlanar devices
fei.scopus.subjectShort channels
fei.scopus.subjectShort-channel devices
fei.scopus.subjectShort-channel effect
fei.scopus.subjectSilicon nanowires
fei.scopus.subjectSubthreshold slope
fei.scopus.subjectTrigate
fei.scopus.updated2025-02-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84873542678&origin=inward
Arquivos
Coleções
Artigos