Single event effect: Simulations and analysis on 3N163 PMOS transistor

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dc.contributor.authorOLIVEIRA, J.
dc.contributor.authorMarcilei Aparecida Guazzelli
dc.contributor.authorASSIS, M. A.
dc.contributor.authorRenato Giacomini
dc.contributor.authorOrcidhttps://orcid.org/0000-0001-6472-4807
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-1060-2649
dc.date.accessioned2022-01-12T21:57:25Z
dc.date.available2022-01-12T21:57:25Z
dc.date.issued2018-03-18
dc.description.abstract© 2018 IEEE.This work addresses the simulation of a commercial p-channel MOSFET (3N163) using Sentaurus TCAD tool to observe the behavior of this device operating under heavy-ion environment, in order to study Single Event Effect (SEE) mechanisms and its effects. The simulated results were used to understand experimental data collected on field and make a comparison between real and simulated data. It also allowed interpretation of experimental data, as well as elimination of spurious noises and artifacts, which are not related to SEE effects, but are imposed by environment and experimental facilities.
dc.description.firstpage1
dc.description.lastpage3
dc.description.volume2018-January
dc.identifier.citationOLIVEIRA, J.; GUAZZELLI, M. A.; ASSIS, M. A.; GIACOMINI, R. Single event effect: Simulations and analysis on 3N163 PMOS transistor. 2018 IEEE 19th Latin-American Test Symposium, LATS 2018, p. 1-3, Aug. 2018.
dc.identifier.doi10.1109/LATW.2018.8349693
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/3792
dc.relation.ispartof2018 IEEE 19th Latin-American Test Symposium, LATS 2018
dc.rightsAcesso Restrito
dc.subject.otherlanguage3N163
dc.subject.otherlanguageMOSFET
dc.subject.otherlanguageSEE
dc.subject.otherlanguageSentaurus
dc.subject.otherlanguageSimulation
dc.titleSingle event effect: Simulations and analysis on 3N163 PMOS transistor
dc.typeArtigo de evento
fei.scopus.citations0
fei.scopus.eid2-s2.0-85050916016
fei.scopus.subject3N163
fei.scopus.subjectExperimental facilities
fei.scopus.subjectMOS-FET
fei.scopus.subjectpMOS transistors
fei.scopus.subjectSentaurus
fei.scopus.subjectSimulated results
fei.scopus.subjectSimulation
fei.scopus.subjectSingle event effects
fei.scopus.updated2024-08-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85050916016&origin=inward
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