Influence of substrate rotation on the low frequency noise of strained triple-gate MuGFETs

dc.contributor.authorDE SOUZA, M. A. S.
dc.contributor.authorRodrido Doria
dc.contributor.authorSIMOEN, E.
dc.contributor.authorMARTINO, J. A.
dc.contributor.authorCLAEYS, C.
dc.contributor.authorMarcelo Antonio Pavanello
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-1361-3650
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-4448-4337
dc.date.accessioned2022-01-12T22:01:44Z
dc.date.available2022-01-12T22:01:44Z
dc.date.issued2013-10-10
dc.identifier.citationDE SOUZA, M. A. S.; DORIA, R.; SIMOEN, E.; MARTINO, J. A.; CLAEYS, C.; PAVANELLO, M. A. Influence of substrate rotation on the low frequency noise of strained triple-gate MuGFETs. 2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013, Oct. 2013.
dc.identifier.doi10.1109/S3S.2013.6716522
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/4088
dc.relation.ispartof2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013
dc.rightsAcesso Restrito
dc.titleInfluence of substrate rotation on the low frequency noise of strained triple-gate MuGFETs
dc.typeArtigo de evento
fei.scopus.citations0
fei.scopus.eid2-s2.0-84897678064
fei.scopus.updated2024-05-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84897678064&origin=inward
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