Charge deposition analysis of heavy-ion-induced single-event burnout in low-voltage power VDMOSFET

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dc.contributor.advisorOrcidhttps://orcid.org/0000-0003-4395-8078
dc.contributor.authorALBERTON, S. G.
dc.contributor.authorAGUIAR, V. A. P.
dc.contributor.authorMEDINA, N. H.
dc.contributor.authorADDED, N.
dc.contributor.authorMACCHIONE, E. L. A.
dc.contributor.authorMENEGASSO, R.
dc.contributor.authorCESARIO. G. J.
dc.contributor.authorSANTOS, H. C.
dc.contributor.authorSCARDUELLI, V. B.
dc.contributor.authorALCANTARA-NUNEZ, J. A.
dc.contributor.authorMarcilei Aparecida Guazzelli
dc.contributor.authorRoberto Santos
dc.contributor.authorFLECHAS, D.
dc.contributor.authorOrcidhttps://orcid.org/0000-0001-7110-7241
dc.date.accessioned2022-10-01T06:03:02Z
dc.date.available2022-10-01T06:03:02Z
dc.date.issued2022-10-05
dc.description.abstract© 2022 Elsevier LtdThe heavy-ion-induced single-event burnout (SEB) risk in power MOSFETs (metal-oxide-semiconductor field-effect transistors) can be assessed in ground facilities, although it is costly and time-demanding. For this reason, there have been few experimental studies dedicated to investigate the relevant parameter related to the description of ion-induced SEB phenomenon. In this work the heavy-ion-induced SEB in a low-voltage power VDMOSFET (vertical double-diffused MOSFET) is studied using several ion-energy combinations. A self-consistent statistical analysis is carried out in order to elucidate the relationship between charge deposition and SEB triggering. Experimental data is compared to a predictive model from the literature for SEE (single-event effect) worst-case prediction in power MOSFETs, supporting for the first time its relevance to the worst-case prediction in the SEB mechanism.
dc.description.volume137
dc.identifier.citationALBERTON, S. G. ALBERTON, S. G.; AGUIAR, V. A. P.; MEDINA, N. H.; ADDED, N.; MACCHIONE, E. L. A.; MENEGASSO, R.; CESARIO. G. J.;SANTOS, H. C.; SCARDUELLI, V. B.; ALCANTARA-NUNEZ, J. A.; GUAZZELLI, M. A.; SANTOS, R.; FLECHAS, D. Charge deposition analysis of heavy-ion-induced single-event burnout in low-voltage power VDMOSFET. Microelectronics Reliability, v. 137, Oct. 2022.
dc.identifier.doi10.1016/j.microrel.2022.114784
dc.identifier.issn0026-2714
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/4589
dc.relation.ispartofMicroelectronics Reliability
dc.rightsAcesso Restrito
dc.subject.otherlanguageCharge deposition
dc.subject.otherlanguageHeavy-ion
dc.subject.otherlanguagePower MOSFET
dc.subject.otherlanguageSingle-event burnout
dc.subject.otherlanguageWorst-case
dc.titleCharge deposition analysis of heavy-ion-induced single-event burnout in low-voltage power VDMOSFET
dc.typeArtigo
fei.scopus.citations0
fei.scopus.eid2-s2.0-85138180497
fei.scopus.subjectBad-case
fei.scopus.subjectCharge deposition
fei.scopus.subjectDiffused-MOSFET
fei.scopus.subjectGround facilities
fei.scopus.subjectIon energies
fei.scopus.subjectLow voltages
fei.scopus.subjectMetaloxide semiconductor field-effect transistor (MOSFETs)
fei.scopus.subjectPower
fei.scopus.subjectPower metal-oxide-semiconductor field-effect transistor
fei.scopus.subjectSingle-event burnouts
fei.scopus.updated2024-07-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85138180497&origin=inward
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