Biaxial stress simulation and electrical characterization of triple-gate SOI nMOSFETs

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dc.contributor.authorBÜHLER, Rudolf Theoderich
dc.contributor.authorAGOPIAN, P. G. D.
dc.contributor.authorSIMOEN. E.
dc.contributor.authorCLAEYS, C.
dc.contributor.authorMARTINO, J. A.
dc.contributor.authorOrcidhttps://orcid.org/0000-0002-7934-9605
dc.date.accessioned2022-01-12T22:02:42Z
dc.date.available2022-01-12T22:02:42Z
dc.date.issued2012-09-02
dc.description.abstractIn this work we study unstrained and biaxially strained triple-gate SOI nMOSFETs by process and device numerical simulations and by electrical characterization. Emphasis is given to the total resistance and transconductance in devices with and without SEG (selective epitaxial growth) and variable fin dimensions. The influence of the fin dimensions on the stress effectiveness is analyzed through 3D process simulations, while the total resistance and transconductance are analyzed through dc measurements. The use of biaxial stress combined with the SEG technique resulted in an lower total resistance and a higher maximum transconductance. © The Electrochemical Society.
dc.description.firstpage145
dc.description.issuenumber1
dc.description.lastpage152
dc.description.volume49
dc.identifier.citationBÜHLER, R. T.; AGOPIAN, P. G. D.; SIMOEN. E.; CLAEYS, C.; MARTINO, J. A. Biaxial stress simulation and electrical characterization of triple-gate SOI nMOSFETs. ECS Transactions, v. 49, n. 1, p. 145-152, Sept. 2012.
dc.identifier.doi10.1149/04901.0145ecst
dc.identifier.issn1938-6737
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/4153
dc.relation.ispartofECS Transactions
dc.rightsAcesso Restrito
dc.titleBiaxial stress simulation and electrical characterization of triple-gate SOI nMOSFETs
dc.typeArtigo de evento
fei.scopus.citations3
fei.scopus.eid2-s2.0-84875860997
fei.scopus.subjectBiaxial stress
fei.scopus.subjectDc measurements
fei.scopus.subjectElectrical characterization
fei.scopus.subjectFin dimensions
fei.scopus.subjectMaximum transconductance
fei.scopus.subjectSelective epitaxial growth
fei.scopus.subjectSOI n-MOSFETs
fei.scopus.subjectTotal resistance
fei.scopus.updated2024-07-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84875860997&origin=inward
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