Parasitic conduction response to X-ray radiation in unstrained and strained triple-gate SOI MuGFETs

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dc.contributor.authorTEIXEIRA, F. F.
dc.contributor.authorBORDALLO, C. C. M.
dc.contributor.authorMarcilei Aparecida Guazzelli
dc.contributor.authorAGOPIAN, P. G. D.
dc.contributor.authorMARTINO, J. A.
dc.contributor.authorSIMOEN, E.
dc.contributor.authorCLAEYS, C.
dc.contributor.authorOrcidhttps://orcid.org/0000-0001-7110-7241
dc.date.accessioned2023-08-26T23:48:45Z
dc.date.available2023-08-26T23:48:45Z
dc.date.issued2014-05-05
dc.description.abstract© 2014, Journal of Integrated Circuits and Systems. All rights reserved.In this work, the X-ray irradiation impact on the back gate conduction and drain current for Triple-Gate SOI FinFETs is investigated for strained and unstrained devices. Both types (P and N) of transistors were analyzed. Since X-rays promote trapped positive charges in the buried oxide, the second interface threshold voltage shifts to lower gate voltage. The performance of n-channel devices presented a strong degradation when submitted to X-rays, while for p-channel devices the opposite trend was observed. Two different dose rates were analyzed.
dc.description.firstpage97
dc.description.issuenumber2
dc.description.lastpage102
dc.description.volume9
dc.identifier.citationTEIXEIRA, F. F.; BORDALLO, C. C. M.; GUAZZELLI, M. A.; AGOPIAN, P. G. D.; MARTINO, J. A.; SIMOEN, E.; CLAEYS, C. Parasitic conduction response to X-ray radiation in unstrained and strained triple-gate SOI MuGFETs. Journal of Integrated Circuits and Systems, v. 9, n. 2, p. 97-102, 2014.
dc.identifier.issn1872-0234
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/4931
dc.relation.ispartofJournal of Integrated Circuits and Systems
dc.rightsAcesso Restrito
dc.rights.licenseIOP Publishing "Este é um artigo publicado em acesso aberto sob uma licença" IOP. Fonte: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84919724280&origin=inward. Acesso em: 04 jun. 2024.
dc.subject.otherlanguageMultiple-Gate MOSFETs (MuGFETs)
dc.subject.otherlanguageParasitic back conduction
dc.subject.otherlanguageX-ray radiation
dc.titleParasitic conduction response to X-ray radiation in unstrained and strained triple-gate SOI MuGFETs
dc.typeArtigo
fei.scopus.citations0
fei.scopus.eid2-s2.0-84919724280
fei.scopus.updated2024-11-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84919724280&origin=inward
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