Estimating temperature dependence of generation lifetime extracted from drain current transients

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dc.contributor.authorMARTINO, J. A.
dc.contributor.authorMilene Galeti
dc.contributor.authorRAFI, J. M.
dc.contributor.authorMERCHA, A.
dc.contributor.authorSIMOEN, E.
dc.contributor.authorCLAEYS, C.
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-2709-1734
dc.date.accessioned2022-01-12T22:05:36Z
dc.date.available2022-01-12T22:05:36Z
dc.date.issued2006-05-01
dc.description.abstractThis paper presents an analysis of the temperature influence on the generation lifetime determination using drain-current transients in floating body partially depleted silicon-insulator n-type metal-oxide-semiconductor field effect transistors fabricated in a 0.13-μm SOI complementary metal-oxide semiconductor technology. The device parameters used to calculate the generation lifetime are studied as a function of the temperature from 20 to 80°C. A sensitivity analysis is done as a function of the gate oxide thickness and silicon film concentration, and the influence on the generation lifetime determination is studied. A simple model to estimate the generation lifetime is proposed. The model is experimentally applied and a good agreement is obtained. All the work is supported by two-dimensional numerical simulation. © 2006 The Electrochemical Society. All rights reserved.
dc.description.issuenumber5
dc.description.volume153
dc.identifier.citationMARTINO, J. A.; GALETI, M.; RAFI, J. M.; MERCHA, A.; SIMOEN, E.; CLAEYS, C. Estimating temperature dependence of generation lifetime extracted from drain current transients. Journal of the Electrochemical Society, v. 153, n. 5, 2006.
dc.identifier.doi10.1149/1.2186034
dc.identifier.issn0013-4651
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/4350
dc.relation.ispartofJournal of the Electrochemical Society
dc.rightsAcesso Restrito
dc.titleEstimating temperature dependence of generation lifetime extracted from drain current transients
dc.typeArtigo
fei.scopus.citations11
fei.scopus.eid2-s2.0-33645698280
fei.scopus.subjectDevice parameters
fei.scopus.subjectGate oxide thickness
fei.scopus.subjectGeneration lifetime determination
fei.scopus.subjectTwo-dimensional numerical simulation
fei.scopus.updated2024-07-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=33645698280&origin=inward
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