On the performance of thin-film lateral SOI PIN diodes as thermal sensors in a wide temperature range

dc.contributor.authorMichelly De Souza
dc.contributor.authorRUE, B.
dc.contributor.authorFLANDRE, D.
dc.contributor.authorMarcelo Antonio Pavanello
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-1361-3650
dc.contributor.authorOrcidhttps://orcid.org/0000-0001-6472-4807
dc.date.accessioned2022-01-12T22:04:32Z
dc.date.available2022-01-12T22:04:32Z
dc.date.issued2009-09-03
dc.description.abstractThis paper presents a study of lateral SOI PIN diodes as temperature sensors in the range of 100 K to 400 K. Experimental results indicate that PIN diodes can be used to implement temperature sensors with high accuracy in cryogenic regime, provided that a suitable temperature range is chosen. Numerical simulations using Atlas two-dimensional simulator were performed in order to confirm this hypothesis and extend this analysis, verifying the accuracy of the existing model. © The Electrochemical Society.
dc.description.firstpage397
dc.description.issuenumber1
dc.description.lastpage404
dc.description.volume23
dc.identifier.citationDE DOUZA, M. RUE, B.; FLANDRE, D.; PAVANELLO, M. A. On the performance of thin-film lateral SOI PIN diodes as thermal sensors in a wide temperature range. ECS Transactions, v. 23, n. 1, p. 397-404, Sept. 2009.
dc.identifier.doi10.1149/1.3183744
dc.identifier.issn1938-5862
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/4277
dc.relation.ispartofECS Transactions
dc.rightsAcesso Restrito
dc.titleOn the performance of thin-film lateral SOI PIN diodes as thermal sensors in a wide temperature range
dc.typeArtigo de evento
fei.scopus.citations4
fei.scopus.eid2-s2.0-74549148132
fei.scopus.subjectNumerical simulation
fei.scopus.subjectPiN diode
fei.scopus.subjectTemperature range
fei.scopus.subjectThermal sensors
fei.scopus.updated2024-05-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=74549148132&origin=inward
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