Ionizing radiation hardness tests of GaN HEMTs for harsh environments

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dc.contributor.authorVILAS BOAS, ALEXIS C.
dc.contributor.authorMELO, MARCO ANTONIO ASSIS DE
dc.contributor.authorRoberto Santos
dc.contributor.authorRenato Giacomini
dc.contributor.authorMEDINA N. H.
dc.contributor.authorSEIXA, L. E.
dc.contributor.authorFINCO, S.
dc.contributor.authorPALOMO, F. R.
dc.contributor.authorROMERO-MAESTRE, A.
dc.contributor.authorMarcilei Aparecida Guazzelli
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-4395-8078
dc.contributor.authorOrcidhttps://orcid.org/0000-0001-7110-7241
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-1060-2649
dc.date.accessioned2021-11-25T21:34:57Z
dc.date.available2021-11-25T21:34:57Z
dc.date.issued2021-01-05
dc.description.abstractThe COTS power transistors based in GaN were exposed to TID effects by 10-keV X-rays. These HEMTs were tested in the On- and Off-state bias conditions. Switching tests were performed before and after irradiation steps. The devices were characterized at temperatures ranging from.
dc.description.firstpage114000
dc.description.volume116
dc.identifier.citationVILAS BOAS, A. C.; MELO, M. A. A. DE; SANTOS, R.B.B.; GIACOMINI, R.; MEDINA, N. H.; SEIXAS, L. E.; FINCO, S.; PALOMO, F. R.; ROMERO-MAESTRE, A.; GUAZZELLI, M. A. Ionizing radiation hardness tests of GaN HEMTs for harsh environments. MICROELECTRONICS RELIABILITY, v. 116, p. 114000, 2021.
dc.identifier.doi10.1016/j.microrel.2020.114000
dc.identifier.issn0026-2714
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/3477
dc.relation.ispartofMICROELECTRONICS RELIABILITY
dc.rightsAcesso Restrito
dc.rights.licenseCreative Commons "Este é um artigo publicado em acesso aberto sob uma licença Creative Commons (CC BY-NC-ND 4.0). Fonte: https://www.sciencedirect.com/science/article/pii/S0026271420308878?via%3Dihub#!. Acesso em: 25 nov. 2021.
dc.subjectTID
dc.subjectRadiation effects
dc.subjectGaN
dc.subjectHEMT
dc.titleIonizing radiation hardness tests of GaN HEMTs for harsh environmentspt_BR
dc.typeArtigopt_BR
fei.scopus.citations16
fei.scopus.eid2-s2.0-85095420739
fei.scopus.updated2024-03-04
fei.source.urlhttps://www.sciencedirect.com/science/article/pii/S0026271420308878?via%3Dihub#!
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