Analytical model for the threshold voltage in junctionless nanowire transistors of different geometries

Abstract

Junctionless nanowire transistors (JNTs) are considered promising for the sub-20 nm era. As these devices have a constant doping profile from source to drain, they have a great scalability without the need for rigorously controlled doping and activation techniques. These devices also present a flexible threshold voltage, which strongly depends on the device cross section. This work proposes an analytical model for JNTs. The model is derived from the solution of the Poisson equation with the appropriate boundary conditions. The quantum confinement for devices of reduced dimensions has also been accounted. The threshold voltage in cylindrical and trigate JNTs are analyzed. Tridimensional numerical simulations were performed to validate the model. ©The Electrochemical Society.