Operation of lateral SOI PIN photodiodes with back-gate bias and intrinsic length variation
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7
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Artigo de evento
Data
2013
Autores
Novo C.
Giacomini R.
Afzalian A.
Flandre D.
Giacomini R.
Afzalian A.
Flandre D.
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Periódico
ECS Transactions
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NOVO, C.; GIACOMINI, R.; AFZALIAN, A.; FLANDRE, D.. Operation of Lateral SOI PIN Photodiodes with Back-Gate Bias and Intrinsic Length Variation. ECS Transactions (Online), v. 53, n. 5, p. 121-126, 2013.
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This paper presents an analysis of the operation of lateral thin-film SOI PIN photodiodes for the detection of short wavelengths. Experimental measurements were done varying the back-gate bias in order to point out the behavior of the device. The temperature influence was also analyzed in 300K to 500K range. In addition, by using two-dimensional numerical simulations, the intrinsic length (LI) was changed, with the purpose of predicting the performance of this photodetector in more advanced technologies. © The Electrochemical Society.