Operation of lateral SOI PIN photodiodes with back-gate bias and intrinsic length variation
N/D
Tipo de produção
Artigo de evento
Data de publicação
2013
Texto completo (DOI)
Periódico
ECS Transactions
Editor
Texto completo na Scopus
Citações na Scopus
7
Autores
Novo C.
Giacomini R.
Afzalian A.
Flandre D.
Orientadores
Resumo
This paper presents an analysis of the operation of lateral thin-film SOI PIN photodiodes for the detection of short wavelengths. Experimental measurements were done varying the back-gate bias in order to point out the behavior of the device. The temperature influence was also analyzed in 300K to 500K range. In addition, by using two-dimensional numerical simulations, the intrinsic length (LI) was changed, with the purpose of predicting the performance of this photodetector in more advanced technologies. © The Electrochemical Society.
Citação
NOVO, C.; GIACOMINI, R.; AFZALIAN, A.; FLANDRE, D.. Operation of Lateral SOI PIN Photodiodes with Back-Gate Bias and Intrinsic Length Variation. ECS Transactions (Online), v. 53, n. 5, p. 121-126, 2013.
Palavras-chave
Keywords
Assuntos Scopus
Advanced technology; Back-gate bias; Length variations; Pin photodiode; Short wavelengths; Temperature influence; Two-dimensional numerical simulation