Operation of lateral SOI PIN photodiodes with back-gate bias and intrinsic length variation

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dc.contributor.authorNovo C.
dc.contributor.authorGiacomini R.
dc.contributor.authorAfzalian A.
dc.contributor.authorFlandre D.
dc.date.accessioned2019-08-19T23:45:23Z
dc.date.available2019-08-19T23:45:23Z
dc.date.issued2013
dc.description.abstractThis paper presents an analysis of the operation of lateral thin-film SOI PIN photodiodes for the detection of short wavelengths. Experimental measurements were done varying the back-gate bias in order to point out the behavior of the device. The temperature influence was also analyzed in 300K to 500K range. In addition, by using two-dimensional numerical simulations, the intrinsic length (LI) was changed, with the purpose of predicting the performance of this photodetector in more advanced technologies. © The Electrochemical Society.
dc.description.firstpage121
dc.description.issuenumber5
dc.description.lastpage126
dc.description.volume53
dc.identifier.citationNOVO, C.; GIACOMINI, R.; AFZALIAN, A.; FLANDRE, D.. Operation of Lateral SOI PIN Photodiodes with Back-Gate Bias and Intrinsic Length Variation. ECS Transactions (Online), v. 53, n. 5, p. 121-126, 2013.
dc.identifier.doi10.1149/05305.0121ecst
dc.identifier.issn1938-5862
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/1257
dc.relation.ispartofECS Transactions
dc.rightsAcesso Restrito
dc.titleOperation of lateral SOI PIN photodiodes with back-gate bias and intrinsic length variation
dc.typeArtigo de evento
fei.scopus.citations7
fei.scopus.eid2-s2.0-84885612426
fei.scopus.subjectAdvanced technology
fei.scopus.subjectBack-gate bias
fei.scopus.subjectLength variations
fei.scopus.subjectPin photodiode
fei.scopus.subjectShort wavelengths
fei.scopus.subjectTemperature influence
fei.scopus.subjectTwo-dimensional numerical simulation
fei.scopus.updated2024-03-04
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84885612426&origin=inward
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