Monte Carlo simulation of graded-channel fully depleted SOI nMOSFETs
Nenhuma Miniatura disponível
Citações na Scopus
0
Tipo de produção
Artigo de evento
Data
2011-02-11
Autores
MARTIN M. J.
RENGEL R.
GALEOTE J. M.
Michelly De Souza
Marcelo Antonio Pavanello
RENGEL R.
GALEOTE J. M.
Michelly De Souza
Marcelo Antonio Pavanello
Orientador
Periódico
Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011
Título da Revista
ISSN da Revista
Título de Volume
Citação
MARTIN M. J.; RENGEL R.; GALEOTE J. M.; DE SOUZA, M.; PAVANELLO, M. A. Monte Carlo simulation of graded-channel fully depleted SOI nMOSFETs. Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011. Fev. 2011.
Texto completo (DOI)
Palavras-chave
Resumo
In this paper a Monte Carlo investigation of Graded Channel (GC) Silicon-On-Insulator MOSFETs is presented. The influence of the length of the lightly-doped region of the channel (LLD) on the microscopic transport properties is exhaustively analyzed. Result show that increasing LLD provides an enhancement of the device performance in terms of drain current and transconductance. However, for LLD values larger than half of the channel the benefits are minimized from a microscopic point of view due to the increasing tendency of the device to behave as a lightly doped conventional transistor. This suggests the existence of an optimum L LD value to fully benefit from the improvements provided by GC doping techniques. © 2011 IEEE.